多芯片SiC功率模块布局优化  

Layout Optimization of Multi-Chip SiC Power Module

作　　者：余秋萍 赵志斌 赵斌 孙鹏 Yu Qiuping;Zhao Zhibin;Zhao Bin;Sun Peng(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Source(NCEPU),Beijing 102206,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京102206

出　　处：《半导体技术》2021年第12期978-985,共8页Semiconductor Technology

基　　金：国家重点研发计划项目(2018YFB0905703)。

摘　　要：传统的SiC模块常采用平面布局,各芯片的工作电路存在明显的不对称性,芯片间存在源极侧公共支路,支路上的耦合电感将导致严重的动态电流不均衡。首先对源极侧公共支路耦合电感对并联芯片间动态电流分布的影响进行了详细分析,建立了描述动态不均衡电流和源极侧公共支路耦合电感关系的解析模型,揭示了该电感对芯片动态均流的影响机理。随后,基于该模型提出了一种立体的多芯片并联圆周布局,该布局能够消除并联芯片间的电流耦合效应,并且提高了源极寄生电感的一致性。最后,仿真与实验结果表明,所提出的新型立体圆周布局下,并联芯片间的动态电流分布一致性显著提高。Conventional SiC modules often use a planar layout, and the working circuits of each chip have obvious asymmetry.There are source-side common branches between the chips, and the coupling inductances on the branches may result in serious dynamic current imbalance.First, the impact of the source-side common branch coupling inductance on the dynamic current distribution between parallel chips was analyzed in detail, an analytical model describing the relationship between the dynamic unbalanced current and the source-side common branch coupling inductances was established, and the mechanism of influence of the inductance parameter on the chip current sharing was revealed.Subsequently, based on this model, a three-dimensional multi-chip parallel circular layout was proposed, which could eliminate the current coupling effect between parallel chips and improve the symmetry of source parasitic inductance.Finally, the simulation and experimental results show that the dynamic current distribution consistency between parallel chips is significantly improved under the proposed new three-dimensional circular layout.

关 键 词：SiC功率模块 动态电流均衡 电流耦合效应 源极侧公共支路耦合电感 立体圆周布局 

分 类 号：TN45[电子电信—微电子学与固体电子学]