Ultrabroadband and multiband infrared/terahertz photodetectors with high sensitivity  

作　　者：JIAQI ZHU HE ZHU MENGJUAN LIU YAO WANG HANLUN XU NASIR ALI HUIYONG DENG ZHIYONG TAN JUNCHENG CAO NING DAI HUIZHEN WU 

机构地区：[1]Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China [2]Zhejiang Province Key Laboratory of Quantum Technology and Devices,Department of Physics,and State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027,China [3]State Key Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China [4]Key Laboratory of Terahertz Solid-State Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [5]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Photonics Research》2021年第11期2167-2175,共9页光子学研究（英文版）

基　　金：National Natural Science Foundation of China(11933006,61775229,61805060,61927813);Key Research and Development Program of Zhejiang Province(2020C01120);Sino-German Science Center(GZ1580)。

摘　　要：Broadband response is pursued in both infrared(IR)and terahertz(THz)detection technologies,which find their applications in both terrestrial and astronomical realms.Herein,we report an ultrabroadband and multiband IR/THz detector based on blocked-impurity-band detecting principle.The detectors are prepared by implanting phosphorus into germanium(Ge:P),where photoresponses with a P impurity band,a self-interstitial defect band,and a vacancy-P(V-P)pair defect band are realized simultaneously.The response spectra of the detectors show ultrabroad and dual response bands in a range of 3-28μm(IR band)and 40-165μm(THz band),respectively.Additionally,a tiny mid-IR(MIR)band within 3-4.2μm is embedded in the IR band.The THz band arises from the P impurity band,whereas the IR and the MIR bands are ascribed to the two defect bands.At150 m V and 4.5 K,the peak detectivities of the three bands are obtained as 2.9×10^(12) Jones(at 3.9μm),6.8×10^(12) Jones(at 16.3μm),and 9.9×10^(12) Jones(at 116.5μm),respectively.The impressive coverage andsensitivity of the detectors are promising for applications in IR and THz detection technologies.

关 键 词：MULTIBAND BANDS DEFECT 

分 类 号：TN15[电子电信—物理电子学]