High-mobility induced high-performance self-powered ultraviolet photodetector based on single ZnO microwire/PEDOT:PSS heterojunction via slight ga-doping  

作　　者：Peng Wan Mingming Jiang Tong Xu Yang Liu Caixia Kan 

机构地区：[1]College of Science,MIIT Key Laboratory of Aerospace Information Materials and Physics,Key Laboratory for Intelligent Nano Materials and Devices,Nanjing University of Aeronautics and Astronautics,No.29 Jiangjun Road,Nanjing 211106,P.R.China

出　　处：《Journal of Materials Science & Technology》2021年第34期33-40,共8页材料科学技术（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.11974182,U1604263,11774171,21805137,11874220);the Fundamental Research Funds for the Central Universities(No.NT2020019);Open Fund of Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education(No.INMD-2020M03)。

摘　　要：Semiconductor micro/nanostructures with broad bandgap can provide powerful candidates for fabricating ultraviolet photodetectors(PDs)due to their proper bandgap,unique optoelectronic properties,large surface-to-volume ratio and good integration.However,semiconducting micro/nanostructures suffer from low electron conductivity and abundant surface defects,which greatly limits their practical application in developing PDs.In this work,an ultraviolet PD consisting of single Ga-doped ZnO microwire(ZnO:Ga MW)and p-type poly(3,4 ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)was designed.When exposed to ultraviolet illumination,the PD exhibits excellent performance(responsivity~185 m A/W,detectivity~2.4×10^(11) Jones,and fast response speed of~212μs for rise time and~387μs for decay time)under self-driven conditions.Compared with that of an undoped Zn O MWbased PD,the responsivity and detectivity of ZnO:Ga MW/PEDOT:PSS PD are significantly enhanced over 400%and 600%,respectively.Due to the incorporation of Ga element,the charge transport properties of a ZnO:Ga MW,specifically for the mobility,are effectively enhanced,which can substantially facilitate the generation,separation,transport and harvest efficiency of photo-generated carriers in the asfabricated PD.Besides,the Ga-incorporation improves the crystalline quality of MWs and reduces surface state density,further suggesting a high-quality ZnO:Ga MW/PEDOT:PSS heterojunction.This work provides a potential approach for designing high-performance self-powered ultraviolet PDs from the aspect of enhancing carrier transport through fine doping.

关 键 词：UV Photodetectors SELF-POWERED Mobility High performance MICROWIRE 

分 类 号：TN23[电子电信—物理电子学]