In-situ growth of high-performance(Ag,Sn)co-doped CoSb_(3)thermoelectric thin films  

作　　者：Zhuang-Hao Zheng Jun-Yu Niu Dong-Wei Ao Bushra Jabar Xiao-Lei Shi Xin-Ru Li Fu Li Guang-Xing Liang Yue-Xing Chen Zhi-Gang Chen Ping Fan 

机构地区：[1]Shenzhen Key Laboratory of Advanced Thin Films and Applications,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China [2]Centre for Future Materials,University of Southern Queensland,Springfield Central,Brisbane,Queensland 4300,Australia [3]School of Mechanical and Mining Engineering,The University of Queensland,St Lucia,Brisbane,Queensland 4072,Australia

出　　处：《Journal of Materials Science & Technology》2021年第33期178-185,共8页材料科学技术（英文版）

基　　金：supported by Guangdong Basic and Applied Basic Research Foundation(2020A1515010515 and 2019A1515110107);National Natural Science Foundation of China(11604212);Australian Research Council。

摘　　要：Owing to the unique features,such as mechanically robust,low-toxic,high stability,and high thermoelectric performance,CoSb_(3)-based skutterudite materials are among art-of-the state thermoelectric candidates.In this work,we develop a facile in-situ method for the growth of well-crystallinity(Ag,Sn)co-doped CoSb_(3)thin films.This preparation method can efficiently control the dopant concentration and distribution in the thin films.Both the density functional theory calculation and the experimental results suggest that Sn and Ag dopants trend to enter the lattice and preferentially fill interstitial sites.Additionally,band structure calculation results suggest that the Fermi level moves into the conduction bands due to co-doping and eventually induces the increased electrical conductivity,which agrees with the optimization of carrier concentration.Moreover,an increase in the density of state after co-doping is responsible for the increased Seebeck coefficient.As a result,the power factors of(Ag,Sn)co-doped CoSb_(3)thin films are greatly enhanced,and the maximum power factor achieves over 0.3 m W m^(-1)K^(-2)at 623 K,which is almost two times than that of the un-doped CoSb_(3)film.Multiple microstructures,including Sb vacancies and Ag/Sn interstitial atoms as point defects,and a high density of lattice distortions coupled with nano-sized Ag-rich grains,lead to all scale phonon scatterings.As a result,a reduced thermal conductivity of~0.28 W m^(-1)K^(-1)and a maximum ZT of~0.52 at 623 K are obtained from(Ag,Sn)co-doped CoSb_(3)thin films.This study indicates our facile in-situ growth can be used to develop high-performance dual doped CoSb_(3)thins.

关 键 词：CoSb_(3)thin films THERMOELECTRIC Magnetron sputtering CO-DOPING 

分 类 号：TB383.2[一般工业技术—材料科学与工程]