Ka频段400 W氮化镓高线性固态功放研制  

Development of a Ka-Band 400 W GaN Highly Linear Solid-State Power Amplifier

作　　者：李凯[1] 张能波 刘祚麟[1] 党章[1] 胡顺勇 LI Kai;ZHANG Neng-bo;LIU Zuo-lin;DANG Zhang;HU Shun-yong(The 10th Research Institute of CETC,Chengdu 610036,China)

机构地区：[1]中国电子科技集团公司第十研究所,成都610036

出　　处：《微波学报》2021年第6期52-56,共5页Journal of Microwaves

摘　　要：介绍了一种Ka频段400 W氮化镓高线性度固态功放的工程实现。使用64片GaN功率芯片,采用微带电桥与波导功分/合成网络相结合的方式进行功率合成,功放在2 GHz的工作频带内连续波饱和输出功率大于400 W。采用射频预失真线性化技术优化氮化镓功放线性度,功放三阶互调指标改善幅度大于9 dB,优于-33 dBc。功放选择带热管的翅片散热器的强制风冷方案,提高了散热器的换热效率,散热性能良好。功放接口独立,并配置了完善的控保功能,技术状态稳定,可靠性及实用性满足工程使用要求,适用于测控、通信等领域的毫米波发射系统。This paper introduces an engineering realization of a Ka-band 400 W GaN highly linear solid-state power amplifier.64 GaN power chips are used for power synthesis by combining microstrip bridge and waveguide power division/synthesis network.The continuous wave saturated output power of the power amplifier is greater than 400 W in the working frequency band of 2 GHz.Radio Frequency predistortion technology is applied,and the third-order intermodulation is better than-33 dBc and the improvement is up to 9 dB.To meet engineering and productive requirement,a good heat dissipation is designed.The control and maintenance functions are provided,the reliability and practicability meet the engineering requirements.

关 键 词：KA频段 氮化镓功放 射频预失真 

分 类 号：TN722.75[电子电信—电路与系统]