Molecular beam epitaxy growth of monolayer hexagonal MnTe_(2)on Si(111)substrate  

作　　者：S Lu K Peng P D Wang A X Chen W Ren X W Fang Y Wu Z Y Li H F Li F Y Cheng K L Xiong J Y Yang J Z Wang S A Ding Y P Jiang) L Wang Q Li F S Li L F Chi 卢帅;彭坤;王鹏栋;陈爱喜;任伟;方鑫伟;伍莹;李治云;李慧芳;程飞宇;熊康林;杨继勇;王俊忠;丁孙安;蒋烨平;王利;李青;李坊森;迟力峰(Institute of Functional Nano&Soft Materials(FUNSOM),Soochow University,Suzhou 215123,China;Vacuum Interconnected Nanotech Workstation(Nano-X),Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,China;Key Laboratory of Polar Materials and Devices(MOE),Department of Electronic,School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China;School of Physical Science and Technology,Southwest University,Chongqing 400715,China;School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China)

机构地区：[1]Institute of Functional Nano&Soft Materials(FUNSOM),Soochow University,Suzhou 215123,China [2]Vacuum Interconnected Nanotech Workstation(Nano-X),Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),Chinese Academy of Sciences(CAS),Suzhou 215123,China [3]Key Laboratory of Polar Materials and Devices(MOE),Department of Electronic,School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China [4]School of Physical Science and Technology,Southwest University,Chongqing 400715,China [5]School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China

出　　处：《Chinese Physics B》2021年第12期142-147,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11604366,11634007,21872099,and 22072102);the National Natural Science Foundation of Jiangsu Province,China(Grant No.BK 20160397);support from the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2017370)。

摘　　要：Monolayer MnTe_(2)stabilized as 1 T structure has been theoretically predicted to be a two-dimensional(2 D)ferromagnetic metal and can be tuned via strain engineering.There is no naturally van der Waals(vdW)layered MnTe_(2)bulk,leaving mechanical exfoliation impossible to prepare monolayer MnTe_(2).Herein,by means of molecular beam epitaxy(MBE),we successfully prepared monolayer hexagonal MnTe_(2)on Si(111)under Te rich condition.Sharp reflection high-energy electron diffraction(RHEED)and low-energy electron diffraction(LEED)patterns suggest the monolayer is atomically flat without surface reconstruction.The valence state of Mn^(4+)and the atom ratio of([Te]:[Mn])further confirm the MnTe_(2)compound.Scanning tunneling spectroscopy(STS)shows the hexagonal MnTe_(2)monolayer is a semiconductor with a large bandgap of~2.78 eV.The valence-band maximum(VBM)locates at theΓpoint,as illustrated by angle-resolved photoemission spectroscopy(ARPES),below which three hole-type bands with parabolic dispersion can be identified.The successful synthesis of monolayer MnTe_(2)film provides a new platform to investigate the 2D magnetism.

关 键 词：molecular beam epitaxy hexagonal MnTe_(2) band structure 

分 类 号：O48[理学—固体物理]