Band alignment in SiC-based one-dimensional van der Waals homojunctions  

作　　者：Xing-Yi Tan Lin-Jie Ding Da-Hua Ren 谭兴毅;丁林杰;任达华(Department of Physics,Chongqing Three Gorges University,Wanzhou 404100,China;School of Information Engineering,Hubei Minzu University,Enshi 445000,China)

机构地区：[1]Department of Physics,Chongqing Three Gorges University,Wanzhou 404100,China [2]School of Information Engineering,Hubei Minzu University,Enshi 445000,China

出　　处：《Chinese Physics B》2021年第12期503-507,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.11864011);the Youth Project of Scientific and Technological Research Program of Chongqing Education Commission,China(Grant Nos.KJQN202001207 and KJQN202101204);the Fund from the Educational Commission of Hubei Province,China(Grant No.T201914)。

摘　　要：The density functional theory method is utilized to verify the electronic structures of SiC nanotubes(SiCNTs) and SiC nanoribbons(SiCNRs) one-dimensional(1D) van der Waals homojunctions(vdWh) under an applied axial strain and an external electric field. According to the calculated results, the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-II band alignment and robust electronic structures with different diameters or widths. Furthermore,the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-I band alignment, respectively, in a range of[-0.3,-0.1] V/A and [0.1, 0.3] V/A and change into metal when the electric field intensity is equal to or higher than0.4 V/A. Interestingly, the SiCNTs/SiCNRs 1D vdWhs have robust electronic structures under axial strain. These findings demonstrate theoretically that the SiCNTs/SiCNRs 1D vdWhs can be employed in nanoelectronics devices.

关 键 词：SiCNTs/SiCNRs one-dimensional(1D)van der Waals homojunctions(vdWh) electronic structure external electric field axial strain 

分 类 号：O48[理学—固体物理]