Manipulating metal-insulator transitions of VO_(2) films via embedding Ag nanonet arrays  

作　　者：Zhangyang Zhou Jia Yang Yi Liu Zhipeng Gao Linhong Cao Leiming Fang Hongliang He Zhengwei Xiong 周章洋;杨佳;刘艺;高志鹏;曹林洪;房雷鸣;贺红亮;熊政伟(Institute of Fluid Physics,China Academy of Engineering Physics,Mianyang 621900,China;Joint Laboratory for Extreme Conditions Matter Properties,Southwest University of Science and Technology,Mianyang 621010,China;Institute of Physics,Nuclear,and Chemistry,China Academy of Engineering Physics,Mianyang 621900,China;School of Materials Science and Engineering,Southwest University of Science and Technology,Mianyang 621010,China)

机构地区：[1]Institute of Fluid Physics,China Academy of Engineering Physics,Mianyang 621900,China [2]Joint Laboratory for Extreme Conditions Matter Properties,Southwest University of Science and Technology,Mianyang 621010,China [3]Institute of Physics,Nuclear,and Chemistry,China Academy of Engineering Physics,Mianyang 621900,China [4]School of Materials Science and Engineering,Southwest University of Science and Technology,Mianyang 621010,China

出　　处：《Chinese Physics B》2021年第12期539-543,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11904299 and U1930124);the Foundation of China Academy of Engineering Physics(Grant No.2018AB02)。

摘　　要：Manipulating metal-insulator transitions in strongly correlated materials is of great importance in condensed matter physics,with implications for both fundamental science and technology.Vanadium dioxide(VO_(2)),as an ideal model system,is metallic at high temperatures and shown a typical metal-insulator structural phase transition at 341 K from rutile structure to monoclinic structure.This behavior has been absorbed tons of attention for years.However,how to control this phase transition is still challenging and little studied.Here we demonstrated that to control the Ag nanonet arrays(NAs)in monoclinic VO_(2)(M)could be effective to adjust this metal-insulator transition.With the increase of Ag NAs volume fraction by reducing the template spheres size,the transition temperature(Tc)decreased from 68°C to 51°C.The mechanism of Tc decrease was revealed as:the carrier density increases through the increase of Ag NAs volume fraction,and more free electrons injected into the VO_(2)films induced greater absorption energy at the internal nanometal-semiconductor junction.These results supply a new strategy to control the metal-insulator transitions in VO_(2),which must be instructive for the other strongly correlated materials and important for applications.

关 键 词：vanadium dioxide volume fraction Ag nanonet arrays metal-insulator transition 

分 类 号：O469[理学—凝聚态物理]