Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy  

作　　者：Xiang-Peng Zhou Hai-Bing Qiu Wen-Xian Yang Shu-Long Lu Xue Zhang Shan Jin Xue-Fei Li Li-Feng Bian Hua Qin 周祥鹏;邱海兵;杨文献;陆书龙;张雪;金山;李雪飞;边历峰;秦华(School of Microelectronics,University of Science and Technology of China,Hefei 230026,China;School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China;Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]School of Microelectronics,University of Science and Technology of China,Hefei 230026,China [2]School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China [3]Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Chinese Physics B》2021年第12期550-555,共6页中国物理B（英文版）

基　　金：Project supported by the National Key R&D Program of China(Grant No.2018YFB0406600);the National Natural Science Foundation of China(Grant Nos.61875224,61804163,and 61827823);Key Laboratory of Microelectronic Devices and Integration Technology,Chinese Academy of Sciences(Grant No.Y9TAQ21);Key Laboratory of Nano-devices and Applications,Chinese Academy of Sciences(Grant No.Y8AAQ21001);Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology(Grant No.DH202011)。

摘　　要：AlN/GaN resonant tunneling diodes(RTDs)were grown separately on freestanding Ga N(FS-GaN)substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy(PA-MBE).Room temperature negative differential resistance(NDR)was obtained under forward bias for the RTDs grown on FS-GaN substrates,with the peak current densities(Jp)of 175-700 kA/cm^(2)and peak-to-valley current ratios(PVCRs)of 1.01-1.21.Two resonant peaks were also observed for some RTDs at room temperature.The effects of two types of substrates on epitaxy quality and device performance of GaN-based RTDs were firstly investigated systematically,showing that lower dislocation densities,flatter surface morphology,and steeper heterogeneous interfaces were the key factors to achieving NDR for RTDs.

关 键 词：resonant tunneling diodes negative differential resistance molecular beam epitaxy Ⅲ-nitrides 

分 类 号：O469[理学—凝聚态物理]