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作 者:魏丹丹 江向平 许经东 陈超 黄枭坤 聂鑫 WEI Dandan;JIANG Xiangping;XU Jingdong;CHEN Chao;HUANG Xiaokun;NIE Xin(Jiangxi Key Laboratory of Advanced Ceramic Materials,School of Material Science and Engineering,Jingdezhen Ceramic Institute,Jingdezhen 333403,China)
机构地区:[1]景德镇陶瓷大学材料科学与工程学院,江西省先进陶瓷材料重点实验室,景德镇333403
出 处:《中国陶瓷》2021年第12期15-21,共7页China Ceramics
基 金:国家自然科学基金(51762024,51862016);江西省自然科学基金(20192BAB206008,20192BAB212002);江西省教育厅科技项目(GJJ190712,GJJ180718,GJJ180739)。
摘 要:采用传统固相法制备(NaBi)_(0.425)(KCe)_(0.075)Bi_(2)Ta_(2)O_(9)(NBTO-0.075KCe)无铅压电陶瓷,系统分析不同烧结工艺对NBTO-0.075KCe陶瓷电学性能的影响。XRD结果显示所有陶瓷样品均生成了m=2的铋层状结构化合物。随着烧结温度的升高,陶瓷晶粒不断长大。当烧结温度为1150℃时,陶瓷样品的体积密度和电学性能达到最佳:ρ=9.10 g·cm^(-3),εr=566,Ea=1.34 eV,Pr=6.70μC·cm^(-2),d_(33)=19.0 pC/N。通过进一步调控烧结气氛,结果表明在N_(2)气氛中1150℃烧结,陶瓷样品的氧空位浓度减少,激活能和压电铁电性能进一步得到了提升:Ea=1.55e V,Pr=10.62μC·cm^(-2),d_(33)=19.6 p C/N。Lead-free piezoelectric ceramics(NaBi)_(0.425)(KCe)_(0.075)Bi_(2)Ta_(2)O_(9)(NBTO-0.075KCe)were prepared by the traditional solid-state method.The effects of different sintering processes on the electrical properties of NBTO-0.075KCe ceramics were systematically analyzed.The XRD results showed that all the ceramic samples were bismuth layer-structured compound with m=2.With the increase of the sintering temperature,the ceramic grains kept growing.When the sintering temperature was 1150°C,the volume density and electrical properties of the NBTO-0.075KCe ceramic samples reached the best:ρ=9.10 g•cm^(-3),εr=566,Ea=1.34eV,Pr=6.70 μC/cm^(-2),d33=19.0 pC/N.By further adjusting the sintering atmosphere,the results revealed that the concentration of oxygen vacancies was reduced when the ceramic samples sintered at 1150℃ in N_(2) atmosphere,the activation energy and piezoelectric ferroelectric properties were further enhanced:Ea=1.55eV,Pr=10.62 μC•cm^(-2),d33=19.6 pC/N.
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