负载电流对IGBT器件中键合线的寿命影响和机理分析  

The Influence and Failure Mechanism Analysis of the Load Current on the IGBT Lifetime with Bond Wire Failure

作　　者：赵子轩 陈杰 邓二平 李安琦 黄永章 Zhao Zixuan;Chen Jie;Deng Erping;Li Anqi;Huang Yongzhang(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University,Beijing 102206 China;NCEPU(Yantai)Power Semiconductor Technology Research Institute Co.Ltd,Yantai 264010 China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京102206 [2]华电(烟台)功率半导体技术研究院有限公司,烟台264010

出　　处：《电工技术学报》2022年第1期244-253,共10页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金资助项目(52007061)。

摘　　要：通过器件的功率循环试验可建立寿命模型,如最常用的CIPS08公式,用来预测实际工况下的寿命情况。其中结温波动和结温最大值对键合线寿命的影响最大,但是在功率循环试验中往往需要同时调节负载电流大小和开通时间来达到相同的结温波动和结温最大值。为了进一步评估负载电流和开通时间这两个参数对键合线寿命的贡献,尤其是负载电流的影响机制,该文对650V/20A的TO封装IGBT器件在相同的结温波动和结温最大值,但在不同的负载电流大小和开通时间的组合条件下进行了功率循环试验。结果表明,不同的负载电流和开通时间组合对器件寿命有不可忽略的影响,电流增大会显著降低IGBT器件中键合线的寿命。为了解释试验出现的现象并揭示其作用机制,该文建立TO封装IGBT器件的电-热-力多物理场有限元模型,考虑铝键合线和表面金属层的弹塑性特性,分析电流影响键合线应力大小的机理。同时引入金属疲劳寿命模型,得到的仿真寿命趋势与试验结果相吻合。该文研究可为IGBT器件的精确模型建立和键合线疲劳寿命预测提供指导意义。Through the power cycle experiment of the device,a life model can be established.For example,the CIPS08 formula is often used to predict the life condition under actual working conditions.The maximum junction temperature and junction temperature fluctuation have the greatest impact on life.However,in the power cycling test,different combinations of load current and load pulse duration can achieve the same maximum junction temperature and junction temperature fluctuation.It reflects the strong coupling relationship of these four parameters.In order to further evaluate the contribution of load current and load pulse duration to the lifetime of bonding wire,in this paper,650 V/20 A IGBT devices are tested under the combined conditions of the same maximum junction temperature and junction temperature fluctuation but different load current and load pulse duration.Meanwhile,the junction temperature and on-state voltage drop in each cycle are monitored in real time during the test.The results show that the load current has a significant effect on the lifetime of the IGBT device.Larger current will reduce the life of IGBT devices obviously.Furthermore,an electric-mechanical-thermal multi-physics finite element model of the TO package IGBT device is established,considering the elastic-plastic characteristics of the aluminum bonding wire and the surface metal layer.The mechanism of the current effect on the stress of the bonding wire is analyzed,and the fatigue model is introduced.Simulation results are consistent with the test results.This paper can provide guidance for the accurate modeling and the lifetime prediction of bonding wire in IGBT devices.

关 键 词：TO封装IGBT 功率循环测试 负载电流 精确有限元模型 寿命预测 

分 类 号：TN322.8[电子电信—物理电子学]