基于微增材技术制造的氧化铟镓锌薄膜晶体管及其性能  

Fabrication and properties of indium gallium zinc oxide thin film transistor fabricated by micro-additive technology

作　　者：张奇 崔西会[2] 方杰 项徽清 刘建国 ZHANG Qi;CUI Xihui;FANG Jie;XIANG Huiqing;LIU Jianguo(Functional Laboratory of Laser and Terahertz Technology,Wuhan National Laboratory for Optoelectronics(WNLO),Huazhong University of Science and Technology(HUST),Wuhan 430074,China;No.29 Research Institute,China Electronics Technology Group Corporation,Chengdu 610036,China)

机构地区：[1]华中科技大学武汉光电国家研究中心激光与太赫兹技术功能实验室,湖北武汉430074 [2]中国电子科技集团公司第二十九研究所,四川成都610036

出　　处：《电子元件与材料》2021年第12期1171-1175,共5页Electronic Components And Materials

基　　金：国家自然科学基金面上项目(51775209)。

摘　　要：薄膜晶体管(Thin-Film Transistors,TFT)是一种重要的有源电子元器件。微笔直写技术作为一种增材制造技术,因其能在三维(3D)曲面基板上直接实现电子元器件的增材制造而备受关注。基于微笔直写的微增材制造技术,采用氧化铟镓锌(IGZO)材料作为有源层,制备了IGZO-TFT器件。在最佳的工艺参数条件下得到的TFT器件迁移率为1.43 cm^(2)/(V·s),开关电流比大于10^(8)。该迁移率与喷墨打印制备的IGZO-TFT器件的迁移率(1.41 cm^(2)/(V·s))相近,低于通过旋涂制备的器件迁移率(4.59 cm^(2)/(V·s))。这表明微笔直写技术是一种可行的薄膜晶体管增材制造技术。Thin film transistor(TFT)is an important active electronic component.As an additive manufacturing technology,micro-pen direct writing technology has attracted great attention because it can directly realize the additive manufacturing of electronic components and devices on three-dimensional(3D)curved substrate.In this work,the TFT with indium-galliumzinc oxide(IGZO)as active layers was fabricated by micro-additive manufacturing technology based upon micro-pen direct writing.Under the optimal process parameters,the mobility of the fabricated IGZO-TFT device is 1.43 cm^(2)/(V·s),and the switching current ratio is greater than 10^(8).The mobility is comparable to that(1.41 cm^(2)/(V·s))of the IGZO-TFT devices fabricated by inkjet printing,which is both smaller than that(4.59 cm^(2)/(V·s))of the devices by spin-coating technology.It shows that it is feasible for the TFT to be fabricated by the micro-pen direct-writing additive manufacturing technology.

关 键 词：薄膜晶体管 微增材制造 微笔直写 氧化铟镓锌有源层 

分 类 号：TN321[电子电信—物理电子学]