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作 者:John B.Mc Manus Cansu Ilhan Bastien Balsamo Clive Downing Conor P.Cullen Tanja Stimpel‑Lindner Graeme Cunningham Lisanne Peters Lewys Jones Daragh Mullarkey Igor V.Shvets Georg S.Duesberg Niall McEvoy
机构地区:[1]School of Chemistry,Trinity College Dublin,Dublin 2 D02 PN40,Ireland [2]AMBER Centre,CRANN Institute,Trinity College Dublin,Dublin 2 D02 PN40,Ireland [3]SIGMA Clermont,UniversitéClermont Auvergne,63000 Clermont–Ferrand,France [4]Institute of Physics,EIT 2,Faculty of Electrical Engineering and Information Technology,Universität der Bundeswehr München,85579 Neubiberg,Germany [5]School of Physics,Trinity College Dublin,Dublin 2 D02 PN40,Ireland
出 处:《Tungsten》2020年第3期321-334,共14页钨科技(英文)
基 金:This work was financially supported by Science Foundation Ireland(SFI,grant numbers:15/SIRG/3329,12/RC/2278_P2,PI_15/IA/3131);the Irish Research Council(Project 204486,Award 13653);Science Foundation Ireland and the Royal Society Fellowship(URF/RI/191637);The SEM and(S)TEM imaging for this project was carried out at the Advanced Microscopy Laboratory(AML),Trinity College Dublin,Ireland.The AML is an SFI supported imaging and analysis centre,part of the CRANN Institute and affiliated to the AMBER centre.G.S.D and T S-L acknowledge the European Commission under the project Graphene Flagship(Grant No.881603);the German Ministry of Education and Research(BMBF)under ACDC(Grant No.13N15100).
摘 要:Tungsten ditelluride(WTe_(2))is a layered transition metal dichalcogenide(TMD)that has attracted increasing research inter-est in recent years.WTe_(2) has demonstrated large non-saturating magnetoresistance,potential for spintronic applications and promise as a type-II Weyl semimetal.The majority of works on WTe_(2) have relied on mechanically exfoliated flakes from chemical vapour transport(CVT)-grown crystals for their investigations.While producing high-quality samples,this method is hindered by several disadvantages including long synthesis time,high-temperature annealing and an inherent lack of scalability.In this work,a synthesis method is demonstrated that allows the production of large-area polycrystalline films of WTe_(2).This is achieved by the reaction of pre-deposited films of W and Te at a relatively low temperature of 550℃.Sputter X-ray photoelectron spectroscopy reveals the rapid but self-limiting nature of the oxidation of these WTe_(2) films in ambient conditions.The WTe_(2) films are composed of areas of micrometre-sized nanobelts that can be isolated and offer potential as an alternative to CVT-grown samples.These nanobelts are highly crystalline with low defect densities indicated by transmission electron microscopy and show promising initial electrical results.
关 键 词:Two-dimensional materials Tungsten ditelluride Film conversion ELECTRODEPOSITION Nanoelectronics
分 类 号:TG146.411[一般工业技术—材料科学与工程] TB383[金属学及工艺—金属材料]
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