基于石墨烯-黑砷异质结构宽频段探测器  

Broadband detector based on graphene-black arsenic heterostructure

作　　者：张力波 张传胜 王林[3] 邢怀中[1] ZHANG Li-Bo;ZHANG Chuan-Sheng;WANG Lin;XING Huai-Zhong(College of Science,Donghua University,shanghai 201620,China;The 50th Research Institute of China Electronics Technology Group,Shanghai 200331,China;State Key Laboratory for Infrared Physics Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)

机构地区：[1]东华大学理学院,上海201620 [2]中国电子科技集团公司第五十研究所,上海200331 [3]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2021年第6期778-783,共6页Journal of Infrared and Millimeter Waves

基　　金：上海市自然科学基金(21ZR1402200,21ZR1473800)。

摘　　要：利用定点转移技术,制备出二维层状材料石墨烯-黑砷范德华异质结构的光电探测器制备,实现了从可见光-红外-微波的宽频段探测。其中在可见红外光辐射下,黑砷中产生的光激发电子-空穴对被分离并注入石墨烯,显著降低了半导体黑砷和金电极之间的势垒,从而实现了有效的光电流提取;在微波频段下,由于两种材料塞贝克系数差异产生光热电效应而激发非平衡载流子,零偏下形成光电流。研究结果为二维层状材料的带隙工程应用于光子和光电子领域铺平了道路。Here,a graphene-black arsenic van der Waals heterostructure is fabricated by the fixed-point transfer technology,realizing the broadband detection from visible light-infrared-microwave.Among them,the photoexcited electronhole pairs generated in the black arsenic are separated and injected into the graphene under visible and infrared light radiation,which significantly reduces the potential barrier between the semiconductor black arsenic and the gold electrode,thereby realizing effective photocurrent extraction.In the microwave band,due to the difference in the Seebeck coefficient of the two materials,the non-equilibrium carriers are generated due to the photothermoelectric effect,forming the photocurrent under zero bias.The research results paved the way for bandgap engineering of two-dimensional layered materials to be applied to the fields of photonics and optoelectronics.

关 键 词：半导体技术 二维层状材料 光电探测 范德华异质结 

分 类 号：TN385[电子电信—物理电子学]