In situ growth of large-area and self-aligned graphene nanoribbon arrays on liquid metal  

作　　者：Le Cai Wanzhen He Xudong Xue Jianyao Huang Ke Zhou Xiahong Zhou Zhiping Xu Gui Yu 

机构地区：[1]Beijing National Laboratory for Molecular Sciences,CAS Research/Education Centre for Excellence in Molecular Sciences,Institute of Chemistry,Chinese Academy of Sciences,Beijing 100190,China [2]School of Chemical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China [3]Applied Mechanics Laboratory,Department of Engineering Mechanics and Centre for Nano and Micro Mechanics,Tsinghua University,Beijing 100084,China

出　　处：《National Science Review》2021年第12期32-40,共9页国家科学评论（英文版）

基　　金：supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB 30000000);the National Natural Science Foundation of China(22021002and 61390502);the Beijing National Laboratory for Molecular Sciences(BNLMS-CXXM-202101)。

摘　　要：Intrinsic graphene features semi-metallic characteristics that limit its applications in electronic devices,whereas graphene nanoribbons(GNRs) are promising semiconductors because of their bandgap-opening feature. However, the controllable mass-fabrication of high-quality GNR arrays remains a major challenge.In particular, the in situ growth of GNR arrays through template-free chemical vapor deposition(CVD) has not been realized. Herein, we report a template-free CVD strategy to grow large-area, high-quality and self-aligned GNR arrays on liquid copper surface. The width of as-grown GNR could be optimized to sub-10 nm with aspect ratio up to 387, which is higher than those of reported CVD-GNRs. The study of the growth mechanism indicates that a unique comb-like etching-regulated growth process caused by a trace hydrogen flow guides the formation of the mass-produced self-aligned GNR arrays. Our approach is operationally simple and efficient, offering an assurance for the use of GNR arrays in integrated circuits.

关 键 词：graphene nanoribbons template-free chemical vapor deposition comb-like etching SELF-ALIGNMENT in situ growth 

分 类 号：TQ127.11[化学工程—无机化工] TB383.1[一般工业技术—材料科学与工程]