SiC MOSFET单粒子效应研究现状  

Recent research progress of single particle effect of SiC MOSFET

作　　者：刘翠翠 郭刚[1,2] 李治明 张付强 陈启明 韩金华[1,2] 杨新宇 LIU Cuicui;GUO Gang;LI Zhiming;ZHANG Fuqiang;CHEN Qiming;HAN Jinhua;YANG Xinyu(China Institute of Atomic Energy,Beijing 102413,China;National Innovation Center of Radiation Application,Beijing 102413,China;Lanzhou University,Lanzhou 730000,China)

机构地区：[1]中国原子能科学研究院,北京102413 [2]国防科技工业抗辐照应用技术创新中心,北京102413 [3]兰州大学,兰州730000

出　　处：《核技术》2022年第1期1-14,共14页Nuclear Techniques

基　　金：中核集团"青年英才"科研项目(No.11FY212306000801)资助。

摘　　要：伴随核能与空间技术的快速发展,SiC MOSFET等高压大功率器件的应用不断增加,其因环境中的高能粒子辐射所引起的单粒子效应问题(如单粒子烧毁、单粒子栅击穿等)也逐渐凸显。为全面深入认识该问题,首先,论证了SiC MOSFET的优势特性,及其在辐射应用中面临的关键问题。然后,整理了目前国内外关于SiC MOSFET单粒子效应的模拟计算、辐照实验及相应研究成果,总结了在SiC MOSFET单粒子效应研究中的主要关注点,并分析了SiC MOSFET单粒子效应敏感性较高的原因。最后,基于目前SiC MOSFET单粒子效应研究中仍存在的问题,展望了未来可重点关注的研究方向。通过系统总结国内外SiC MOSFET单粒子效应研究进展,希望能为研究SiC MOSFET单粒子效应物理机制以及改进其抗单粒子效应加固技术提供有价值的参考。With the rapid development of nuclear energy and space technology,application of high-voltage power devices based on SiC,especially the SiC MOSFET,is increasing.The problems of single event effect(SEE)caused by high-energy particle radiation in the radiation environment,such as,single event burnout(SEB)and single event gate rupture(SEGR),are becoming more and more prominent.In order to systematically understand the research progress of SiC MOSFET SEE,and accelerate the research of SiC MOSFET SEE mechanism and its radiation hardening technologies,the advantages of SiC MOSFET and the key problems in its radiation application are first demonstrated.Then,the simulation calculation,irradiation experiment and corresponding research results of SiC MOSFET SEE at home and abroad are comprehensively reviewed,and the main focus of related research is summarized.In addition,the possible reasons for the high sensitivity of SiC MOSFET to SEE is analyzed.Finally,possible future research directions of SiC MOSFET SEE are discussed according to current existing problems in this field.By systematically summarizing the research progress of SiC MOSFET SEE worldwide,it is expected to provide valuable reference for fully revealing the physical mechanism of SiC MOSFET SEE,and even further improving the radiation hardening technologies of SiC MOSFET to prevent the problem from SEE.

关 键 词：SiC MOSFET 单粒子效应 抗辐照加固 性能评估 

分 类 号：TL99[核科学技术—核技术及应用]