Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate  

作　　者：Kuankuan Lu Rihui Yao Wei Xu Honglong Ning Xu Zhang Guanguang Zhang Yilin Li Jinyao Zhong Yuexin Yang Junbiao Peng 

机构地区：[1]State Key Laboratory of Luminescent Materials and Devices,South China University of Technology,Guangzhou 510640,China

出　　处：《Research》2021年第1期295-303,共9页研究（英文）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.51771074,62074059,and 22090024);Guangdong Major Project of Basic and Applied Basic Research(No.2019B030302007);Fundamental Research Funds for the Central Universities(Nos.2020ZYGXZR060 and 2019MS012);Guangdong Natural Science Foundation(No.2018A0303130211);South China University of Technology 100 Step Ladder Climbing Plan Research Project(Nos.j2tw202004035,j2tw202004034,and j2tw202004095);National College Students Innovation and Entrepreneurship Training Program(Nos.202010561001,202010561004,and 202010561009);2021 Guangdong University Student Science and Technology Innovation Special Fund(“Climbing Plan”Special Fund)(No.pdjh2021b0036);Ji Hua Laboratory Scientific Research Project(X190221TF191).

摘　　要：Flexible thin-film transistors with high current-driven capability are of great significance for the next-generation new display technology.The effect of a Cu-Cr-Zr(CCZ)copper alloy source/drain(S/D)electrode on flexible amorphous neodymiumdoped indium-zinc-oxide thin-film transistors(NdIZO-TFTs)was investigated.Compared with pure copper(Cu)and aluminum(Al)S/D electrodes,the CCZ S/D electrode changes the TFT working mode from depletion mode to enhancement mode,which is ascribed to the alloy-assisted interface layer besides work function matching.X-ray photoelectron spectroscopy(XPS)depth profile analysis was conducted to examine the chemical states of the contact interface,and the result suggested that chromium(Cr)oxide and zirconium(Zr)oxide aggregate at the interface between the S/D electrode and the active layer,acting as a potential barrier against residual free electron carriers.The optimal NdIZO-TFT exhibited a desired performance with a saturation mobility(μsat)of 40.3 cm^(2)·V-1·s^(-1),an Ion/Ioff ratio of 1:24×10^(8),a subthreshold swing(SS)value of 0.12 V·decade^(-1),and a threshold voltage(Vth)of 0.83 V.This work is anticipated to provide a novel approach to the realization of highperformance flexible NdIZO-TFTs working in enhancement mode.

关 键 词：interface ELECTRODE copper 

分 类 号：TN32[电子电信—物理电子学]