仿真看世界之SiC MOSFET单管的并联均流特性  

Simulation Study on Current Sharing Performance of SiC MOSFET

作　　者：张浩 Zhang Hao

机构地区：[1]英飞凌工业半导体

出　　处：《变频器世界》2021年第10期83-85,共3页The World of Inverters

摘　　要：SiC MOSFET的并联一直是行业的研究热点,文章结合器件的SPICE模型与Simetrix仿真环境,以TO247-4封装的SiC MOSFET单管为例,仿真分析了回路中不同位置的杂散电感差异对SiC单管并联均流的影响。经过仿真对比,可以看出发射极回路的杂散电感(源极电感)对并联的影响最为显著。The performance of SiC MOSFET paralleling has always been a research hotspot in the industry.This paper did some study on TO247-4 package SiC MOSFET paralleling issue by simulations,with the SiC device SPICE model and Simetrix simulator.Based on simulation results,the difference of source inductance of paralleled device has the most significant impact on the paralleling performances.

关 键 词：SiC MOSFET单管 TO247-4 并联均流 杂散电感 源极电感 

分 类 号：TM743[电气工程—电力系统及自动化]