基于MK.1TE测试系统对芯片静电放电(ESD)测试分析  

Analysis of Chip Electrostatic Discharge (ESD) Test Based on MK.1TE Test System

作　　者：吕友成 陈仲永 聂帆宇 叶武剑 LYU Youcheng;CHEN Zhongyong;NIE Fanyu;YE Wujian(Guangzhou Xinghai Integrated Circuit Center Co.,Ltd.,Guangzhou 510006,China;Guangdong University of Technology,Guangzhou 510006,China)

机构地区：[1]广州星海集成电路基地有限公司,广东广州510006 [2]广东工业大学,广东广州510006

出　　处：《现代信息科技》2021年第18期35-39,共5页Modern Information Technology

基　　金：广东省重大科技专项(2018B01 0115002、2019B010140002)。

摘　　要：ESD是指"静电释放"。静电是一种客观的自然现象,不均匀分布在芯片本身、人体和机器上以及芯片能够存在的环境及周围的事物上。这些静止的电荷随时都可能通过某种方式释放出来。静电释放的特点是高电压、低电量、小电流和作用时间短。随着电子学系统和集成电路,比如专用集成电路(ASIC)或"片上系统(SOC)"的复杂度增加,测试和分析集成电路对静电释放的防护能力是非常重要的。该文将介绍集成电路产品基于MK.1TE测试系统的ESD测试方法和分析。ESD refers to "electrostatic discharge".Static electricity is an objective natural phenomenon,which is unevenly distributed in the chip itself,human body and machine,as well as the environment and surrounding things where the chip can exist.These static charges may be released in some way at any time.Electrostatic discharge is characterized by high voltage,low electric quantity,small current and short action time.With the increasing complexity of electronic systems and integrated circuits,such as specific integrated circuits (ASIC) or "system on chip (SOC)",it is very important to test and analyze the protection ability of integrated circuits against electrostatic discharge.This paper will introduce the ESD test method and analysis of integrated circuit products based on MK.1TE test system.

关 键 词：静电放电 ESD MK.1TE测试系统 ESD击穿的临界电压 

分 类 号：TN40[电子电信—微电子学与固体电子学]