划痕速率和晶向对6H-SiC单晶片划痕特征的影响  

Effects of Scratch Speed and Crystal Orientation on Scratch Characteristics of 6H-SiC Wafer

作　　者：张银霞[1] 黄鹏举 郜伟[1] ZHANG Yinxia;HUANG Pengju;GAO Wei(Henan Key Engineering Laboratory of Anti-Manufacturing Technology,School of Mechanical and Power Engineering,Zhengzhou University,Zhengzhou 450001,China)

机构地区：[1]郑州大学机械与动力工程学院抗疲劳制造技术河南省工程实验室,郑州450001

出　　处：《硅酸盐学报》2021年第12期2644-2651,共8页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金重点项目(U1804254);河南省自然科学基金(162300410244);中国博士后科学基金(2015M580635)。

摘　　要：采用微纳米力学测试系统对6H-Si C单晶片开展了不同速率和不同晶向的划痕试验,对划痕的摩擦系数、划痕切削深度以及表面三维形貌进行分析,进而研究划痕速率和晶向对6H-SiC单晶片划痕特征的影响。结果表明:当静载荷4 N和6 N、划痕速率从0.2 mm/min到1.6 mm/min时,随着载荷及划痕速率增大,划痕摩擦系数、划痕切削深度和划痕宽度等增大,SiC单晶片塑性变形区域增大,表面更粗糙。低速时摩擦系数较小,在一定程度上会减小划头的磨损速率。不同晶向的划痕材料堆积和凹坑程度不同,沿[1120]和[1120]晶向划痕的摩擦系数、划痕峰高和谷深较小,而沿[2110]和[1210]晶向划痕时较大,前者比后者较易实现塑性域加工。Scratch tests were conducted on 6H-Si C single crystal wafers at different speeds and crystal orientations by a micron-/nano-sacle mechanical test system to analyze the friction coefficient,scratch depth of cut and surface three-dimensional morphology of the scratches.The results show that when the static load is 4 N or 6 N and the scratch speed is 0.2-1.6 mm/min,the scratch friction coefficient,scratch cutting depth and scratch width increase with the increases of load and scratch speed,and the plastic deformation area of Si C single crystal sheet increases and the surface becomes rougher.The friction coefficient is lower for low-speed scratching,thus reducing the wear rate of diamond head to some degree.The accumulation and pit degree of scratch materials at different crystal orientations are different.When the scratch crystal orientations are [1120] and [1120],the friction coefficient,peak height and valley depth of scratch morphology are smaller,while the scratches along the [2110] and [1210] crystal orientations are larger.The former is easier to realize plastic removal than the latter.

关 键 词：碳化硅晶片 划痕速率 晶向 表面形貌 

分 类 号：TN305.1[电子电信—物理电子学]