偏振光腔衰荡技术测量单层SiO_(2)薄膜特性  

Polarized cavity ring-down technique for characterization of single-layer SiO_(2) films

作　　者：武梅妤 王静 李斌成 Wu Meiyu;Wang Jing;Li Bincheng(School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu,Sichuan 610054,China)

机构地区：[1]电子科技大学光电科学与工程学院,四川成都610054

出　　处：《光电工程》2021年第11期32-40,共9页Opto-Electronic Engineering

摘　　要：为了探究特定沉积工艺参数下,不同沉积角度对SiO_(2)光学薄膜损耗及应力双折射的影响,本文采用一种高灵敏探测方法⎯偏振光腔衰荡技术表征单层SiO_(2)光学薄膜。该技术基于测量光学谐振腔内偏振光来回反射累积后的衰荡时间特性及产生的相位差振荡频率,实现光学元件的光学损耗和残余应力的同点、同时绝对测量。实验对60°、70°和80°沉积角度条件下制备的单层SiO_(2)薄膜样品进行了应力和光学损耗的测量分析。结果显示了不同沉积角度条件下制备的SiO_(2)薄膜表面粗糙程度和致密性变化对薄膜损耗和应力双折射效应的影响,该结果对制备低光学损耗、低应力SiO_(2)光学薄膜提供了技术指导。In this paper,a highly sensitive detection method-polarized cavity ring-down(P-CRD)technique-is employed to investigate the influence of deposition angle on the optical loss and stress-induced birefringence of single-layer SiO_(2) films prepared with specific deposition process parameters.The P-CRD technique is based on measuring the decay behavior of accumulated polarized light reflecting back and forth inside a resonant cavity.The decay time and oscillating frequency of resulted phase difference of the CRD signal are applied to measure simultaneously the absolute values of the optical loss and residual stress-induced birefringence at the same measurement point of single-layer SiO_(2) films.In the experiment,the optical losses and stress-induced birefringence of the single-layer SiO_(2) film samples prepared under different deposition angles of 60°,70°,and 80°are measured and analyzed.The results revealed the effects of the changes of surface roughness and film compact density caused by the different deposition angles on the optical loss and stress-induced birefringence of the single-layer SiO_(2) films,respectively.These results are helpful to the preparation of high-performance SiO_(2) films with low optical loss and low residual stress.

关 键 词：偏振光腔衰荡 光学损耗 应力双折射 SiO_(2)光学薄膜 

分 类 号：O484.4[理学—固体物理]