Valley-Chiral Edge States of Antisymmetric Plate Wave in Phononic Crystals with Linear Defect  

作　　者：Jinfeng Zhao Weitao Yuan Fan Yang Zheng Zhong 

机构地区：[1]School of Aerospace Engineering and Applied Mechanics,Tongji University,100 Zhangwu Road,Shanghai,200092,China [2]School of Science,Harbin Institute of Technology,Shenzhen,518055,China

出　　处：《Acta Mechanica Solida Sinica》2021年第6期810-819,共10页固体力学学报（英文版）

基　　金：Shanghai Science and Technology Innovation Plan(Grant No.20ZR1462700);State Key Laboratory of ASIC&System(2020KF006);Jinfeng Zhao would like to acknowledge helpful discussions with Prof.Jie Ren from Tongji University.

摘　　要：In this work,two typical interfaces are established for the antisymmetric plate wave by introducing linear defect in between phononic crystals with opposite valley Hall phases.The evolution of projected curves is demonstrated as the defect width increases,which magnifies the occurrence of multiple edge states on both interfaces.The mapping of transmission coefficient is obtained upon the incidence of transversely symmetric and antisymmetric sources,respectively.It is shown that the first edge state contains only symmetric or antisymmetric component regardless the defect width modulation,while other edge states contain both components.When void cavity occurs on the interfaces,the mapping of transmission coefficient shows that the first edge state is topologically protected and its transverse symmetry or antisymmetry is almost unperturbed by the void cavity,while other edge states do not perform the same way.Our work provides useful guidance for the design of topological edge states,and bridges the topological edge states and linear defect modes on the same interface.

关 键 词：Topological edge state VALLEY Transverse symmetry Plate wave 

分 类 号：O735[理学—晶体学]