Nanodevices engineering and spin transport properties of MnBi_(2)Te_(4) monolayer  

作　　者：Yipeng An Kun Wang Shijing Gong Yusheng Hou Chunlan Ma Mingfu Zhu Chuanxi Zhao Tianxing Wang Shuhong Ma Heyan Wang Ruqian Wu Wuming Liu 

机构地区：[1]School of Physics&Henan Key Laboratory of Boron Chemistry and Advanced Energy Materials,Henan Normal University,Xinxiang,China [2]Department of Physics and Astronomy,Mississippi State University,Starkville,MS,USA [3]Department of Chemistry,Mississippi State University,Starkville,MS,USA [4]Key Laboratory of Polar Materials and Devices(MOE)&Department of Optoelectronics,East China Normal University,Shanghai,China [5]Department of Physics and Astronomy,University of California,Irvine,CA,USA [6]School of Physics,Sun Yat-Sen University,Guangzhou,China [7]School of Physics and Technology,Suzhou University of Science and Technology,Suzhou,Jiangsu,China [8]Hebi National Lighting Co.Ltd,Hebi,China [9]Siyuan Laboratory,Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials,Department of Physics,Jinan University,Guangzhou,China [10]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing,China

出　　处：《npj Computational Materials》2021年第1期414-421,共8页计算材料学（英文）

基　　金：We acknowledge funding from the National Natural Science Foundation of China(Nos.11774079 and 61774059);the Scientific and Technological Innovation Program of Henan Province’s Universities(No.20HASTIT026);the Natural Science Foundation of Henan(No.202300410226);the Natural Science Foundation of Henan Normal University(No.2020PL15);the Henan Overseas Expertise Introduction Center for Discipline Innovation(No.CXJD2019005);the HPCC of HNU.RW acknowledges funding from the US DOE-BES(No.DE-FG02-05ER46237);We thank F.Xue at Tsinghua University,W.Ju and D.Kang at HNUST for helpful discussions.

摘　　要：Two-dimensional(2D)magnetic materials are essential for the development of the next-generation spintronic technologies.Recently,layered van der Waals(vdW)compound MnBi2Te4(MBT)has attracted great interest,and its 2D structure has been reported to host coexisting magnetism and topology.Here,we design several conceptual nanodevices based on MBT monolayer(MBT-ML)and reveal their spin-dependent transport properties by means of the first-principles calculations.The pn-junction diodes and sub-3-nm pin-junction field-effect transistors(FETs)show a strong rectifying effect and a spin filtering effect,with an ideality factor n close to 1 even at a reasonably high temperature.In addition,the pip-and nin-junction FETs give an interesting negative differential resistive(NDR)effect.The gate voltages can tune currents through these FETs in a large range.Furthermore,the MBT-ML has a strong response to light.Our results uncover the multifunctional nature of MBT-ML,pave the road for its applications in diverse next-generation semiconductor spin electric devices.

关 键 词：temperature IDEALITY TRANSPORT 

分 类 号：TB383[一般工业技术—材料科学与工程]