Dipolar spin relaxation of divacancy qubits in silicon carbide  

作　　者：Oscar Bulancea-Lindvall Nguyen T.Son Igor A.Abrikosov Viktor Ivády 

机构地区：[1]Department of Physics,Chemistry and Biology,Linköping University,SE-58183 Linköping,Sweden [2]Wigner Research Centre for Physics,Hungarian Academy of Sciences,PO Box 49,H-1525 Budapest,Hungary [3]Max-Planck-Institut für Physik komplexer Systeme,Nöthnitzer Straße 38,D-01187 Dresden,Germany

出　　处：《npj Computational Materials》2021年第1期1974-1984,共11页计算材料学（英文）

基　　金：We acknowledge support from the Knut and Alice Wallenberg Foundation through the WBSQD2 project(Grant No.2018.0071);Support from the Swedish Government Strategic Research Area SeRC and the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University(Faculty Grant SFO-Mat-LiU No.200900971)is gratefully adknowledged.V.l.adknowledges the support from the MTA Premium Postdoctoral Research Program,the Hungarian NKFIH grantsNo.KKP129866 of the National Excellence Program of Quantum-coherent materials project;the NKFIH through the National Quantum Technology Program(Grant No.2017-1.2.1-NKP-2017-00001);the Quantum Information National Laboratory sponsored by the Ministry of Innovation and Technology of Hungary.N.T.S.adknowl-edges the support from the Swedish Research Coundl(Grant Na.VR 2016-04068);the EU H2020 project QuanTELCO(Grant No.862721);The calculations were performed on resources provided by the Swedish National Infrastructure for Computing(SNIC)at the National Supercomputer Centre(NSC)partially funded by the Swedish Research Council through grant agreement No.2018-05973.

摘　　要：Divacancy spins implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host On the other hand,there are still numerous open questions about the physics of these important defects,for instance,spin relaxation has not been thoroughly studied yet.Here,we carry out a theoretical study on environmental spin-induced spin relaxation processes of divacancy qubits in the 4H polytype of silicon carbide(4H-SiC).We reveal all the relevant magnetic field values where the longitudinal spin relaxation time T,drops resonantly due to the coupling to either nuclear spins or electron spins.We quantitatively analyze the dependence of the T,time on the concentration of point defect spins and the applied magnetic field and provide ananalytical expression.We demonstrate that dipolar spin relaxation plays a significant role both in as-grown and ion-implanted samples and it often limits the coherence time of divacancy qubits in 4H-SiC.

关 键 词：RELAXATION VACANCY RESONANT 

分 类 号：O47[理学—半导体物理]