基于InGaP/GaAs HBT工艺超宽带高线性度单片放大器  

Ultra-wideband high linearity monolithic amplifier based on InGaP/GaAs HBT process

作　　者：陈仲谋 张博 CHEN Zhongmou;ZHANG Bo(School of Electronic Engineering,Xi'an University of Posts and Telecommunications,Xi'an 710121,China)

机构地区：[1]西安邮电大学电子工程学院,陕西西安710121

出　　处：《电子元件与材料》2022年第1期83-88,共6页Electronic Components And Materials

基　　金：陕西省教育厅服务地方产业化专项(15JF029);陕西省重点研发计划项目(2018ZDXM-GY-010,2017ZDXM-GY-044,2016KTCQ01-08);西安市集成电路重大专项(201809174CY3JC16)。

摘　　要：为解决传统达林顿结构的单片射频放大器线性度低和高低温下静态电流变化大的问题,设计了动态偏置电路和有源偏置电路来提高放大器的线性度和稳定静态电流。同时,为了扩展放大器的带宽和提高增益平坦度,设计了负反馈电路结构。基于2μm磷化镓铟/砷化镓异质结双极型晶体管(InGaP/GaAs HBT)工艺和达林顿结构,设计了单片微波放大器。电磁仿真结果表明:在5 V电压供电下,静态功耗为0.17 W,本放大器在0.05~10 GHz频率范围内,小信号增益最大为21 dB,输出功率三阶交调点最大为31.1 dBm,输出功率1 dB压缩点最大为16.1 dBm,回波损耗均小于-10 dB,高低温下静态电流波动±1.5 mA。To solve the problem of low linearity and large quiescent current variation of the traditional Darlington monolithic RF amplifier,a dynamic bias circuit and an active bias circuit were designed to improve the linearity of the amplifier and to stabilize the quiescent current.Meanwhile,a negative feedback circuit was also designed to expand the bandwidth of the amplifier and improve the gain flatness.Based on the 2μm InGaP/GaAs HBT process and Darlington structure,a monolithic microwave amplifier was designed with above circuit structures.The electromagnetic simulation results show that the static power consumption is 0.17 W at the power supply of 5 V.From 0.05 GHz to 10 GHz,the maximum small signal gain is 21 dB,the maximum output power third-order intermodulation point is 31.1 dBm,the maximum output power 1 dB compression point is 16.1 dBm,the return loss is less than-10 dB,and the quiescent current fluctuates±1.5 mA as temperature varies.

关 键 词：超宽带 高线性度 放大器 GaAs HBT 动态偏置 有源偏置 达林顿结构 

分 类 号：TN722[电子电信—电路与系统]