基于单向脉冲电路和SiC器件的超高频感应加热电源  

An Ultra High Frequency Induction Heating Source Based on Unidirectional Pulse Circuit and SiC Device

作　　者：石新春[1] 马莽原 柴艳鹏 李亚斌[1] 付超[1] Shi Xinchun;Ma Mangyuan;Chai Yanpeng;Li Yabin;Fu Chao(Department of Electrical and Electronic Engineering North China Electric Power University,Baoding 071003 China;Baoding Sifang Sanyi Electric Co.Ltd,Baoding 071051 China)

机构地区：[1]华北电力大学电气与电子工程学院,保定071003 [2]保定四方三伊电气有限公司,保定071051

出　　处：《电工技术学报》2021年第S02期600-609,共10页Transactions of China Electrotechnical Society

基　　金：河北省重大科技成果转化资助项目(15044503Z)。

摘　　要：针对超高频感应加热电源中存在的输出功率小、寄生参数引起的电压电流冲击严重、开关损耗大等问题,提出基于单向脉冲电路和SiC器件的超高频感应加热电源。该电路采用RLC负载并联谐振和单向脉冲供电的工作方式,增大输出功率。开关器件采用新型SiC MOSFET,开关时间短,可以提升工作频率。此外,直流母线串接大电感,可以吸收母线的杂散电感,通过的直流电流不会对开关器件产生电压冲击,同时,连接线路采用简单的平行母排结构,减小了线路的杂散电感,减弱了对开关器件的电压冲击。开关器件工作在软开关状态,可以降低开关损耗。研究分析电路的工作原理和特性,并通过仿真和1MHz/1kW的样机进行验证。This paper proposes an ultrahigh frequency Induction heating source based on unidirectional pulse circuit and SiC device for the problems of power limitation,voltage-current impulse and switch losses.The RLC parallel resonant load and unidirectional pulse circuit are adopted to increase the output power of the ultrahigh frequency source.A new type of SiC MOSFET is adopted as switch device with short switching time,so the working frequency can be improved.In addition,a large inductor is connected with the bus-bar in series,absorbing the stray inductance of the bus-bar,and the direct current can not generate the voltage impact.Meanwhile,the connection line adopts a simple parallel bus-bar structure and reduces the line stray inductance,so the voltage impact of the switching device will be decreased.The switching device is operated in soft switching model,and the switching loss can be reduced.The working principle and characteristics of the circuit are analyzed and verified by simulation and 1 MHz/1 kW prototype.

关 键 词：单向脉冲电路 SIC器件 感应加热 超高频 

分 类 号：TM46[电气工程—电器]