双电子传输层结构硫硒化锑太阳电池的界面特性优化  

Optimization of interfacial characteristics of antimony sulfide selenide solar cells with double electron transport layer structure

作　　者：曹宇[1,2] 刘超颖[1,2] 赵耀 那艳玲 江崇旭 王长刚 周静 于皓[1,2] Cao Yu;Liu Chao-Ying;Zhao Yao;Na Yan-Ling;Jiang Chong-Xu;Wang Chang-Gang;Zhou Jing;Yu Hao(Key Laboratory of Modern Power System Simulation and Control&Renewable Energy Technology,Ministry of Education(Northeast Electric Power University),Jilin 132012,China;School of Electrical Engineering,Northeast Electric Power University,Jilin 132012,China;China Railway Design Corporation,Tianjin 300308,China;National Engineering Laboratory for Digital Construction and Evaluation Technology of Urban Rail Transit,Tianjin 300308,China;School of Chemical Engineering,Northeast Electric Power University,Jilin 132012,China)

机构地区：[1]现代电力系统仿真控制与绿色电能新技术教育部重点实验室(东北电力大学),吉林132012 [2]东北电力大学电气工程学院,吉林132012 [3]中国铁路设计集团有限公司,天津300308 [4]城市轨道交通数字化建设与测评技术国家工程实验室,天津300308 [5]东北电力大学化学工程学院,吉林132012

出　　处：《物理学报》2022年第3期331-338,共8页Acta Physica Sinica

基　　金：城市轨道交通数字化建设与测评技术国家工程实验室开放课题基金(批准号:2021HJ05);国家自然科学基金(批准号:51772049)资助的课题.

摘　　要：硫硒化锑薄膜太阳电池因其制备方法简单、原材料丰富无毒、光电性质稳定等优点,成为了光伏领域的研究热点.经过近几年的发展,硫硒化锑太阳电池的光电转换效率已经突破10%,极具发展潜力.本文针对硫硒化锑太阳电池中n/i界面引起的载流子复合进行了深入研究.发现硫硒化锑太阳电池的界面特性会受到界面电子迁移能力和能带结构两方面的影响.界面电子迁移率的提高能使电子更有效地传输至电子传输层,实现器件短路电流密度和填充因子的有效提升.在此基础上,引入ZnO/Zn_(1–x)Mg_(x)O双电子传输层结构能够进一步优化硫硒化锑太阳电池性能.其中,Zn_(1–x)Mg_(x)O能级位置的改变可以同时调节界面和吸光层的能级分布,在Zn_(1–x)Mg_(x)O导带能级为–4.2 eV,对应Mg含量为20%时,抑制载流子复合的效果最为明显,硫硒化锑太阳电池也获得了最佳的器件性能.在去除缺陷态的理想情况下,双电子传输层结构硫硒化锑太阳电池在600 nm厚时获得了20.77%的理论光电转换效率,该研究结果为硫硒化锑太阳电池的进一步优化和发展提供了理论与技术支持.Antimony sulfide selenide thin film solar cells have drawn great interest in the field of photovoltaic due to their advantages of simple preparation method,abundant raw materials,non-toxic and stable photoelectric properties.After the development in recent years,the photoelectric conversion efficiency of antimony sulfide selenide solar cells has exceeded 10%,which has great development potential.In this work,the carrier recombination near n/i interface in antimony sulfide selenide solar cells is studied.It is found that the characteristics of the n/i interface are affected by the interfacial electron mobility and energy band structure.The improvement of the interface electron mobility can make the electrons more effectively transferred to the electron transport layer,and realize the effective improvement of the short circuit current density and fill factor of the device.Moreover,the introduction of ZnO/Zn_(1–x)Mg_(x)O double electron transport layer structure can further optimize the performance of antimony sulfide selenide solar cells.The change of Zn_(1–x)Mg_(x)O energy level position can adjust the energy level distribution of the interface and light absorption layer simultaneously.When the conduction band energy level of Zn_(1–x)Mg_(x)O is–4.2 eV and the corresponding Mg content is 20%,the effect of restraining the carrier recombination is the most obvious,and the antimony sulfide selenide solar cell also obtains the best device performance.Finally,under the ideal condition of removing the defect state,the antimony sulfide selenide solar cells with 600 nm in thickness can achieve 20.77%theoretical photoelectric conversion efficiency.The research results provide theoretical and technical support for further optimizing and developing the antimony sulfide selenide solar cells.

关 键 词：薄膜太阳电池 硫硒化锑 界面特性 双电子传输层 

分 类 号：TM914.4[电气工程—电力电子与电力传动]