一种基于PVK/ZnO异质结构的新型光电忆阻器  

Novel Photoelectric Memristor Based on PVK/ZnO Heterostructure

作　　者：阴玥 齐浩博 刘磊[2] YIN Yue;QI Haobo;LIU Lei(School of Microelectronics,Northwestern Polytechnical University,Xian,China;China Ceprei Laboratory,China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou,China)

机构地区：[1]西北工业大学微电子学院,西安 [2]工业和信息化部电子第五研究所,广州

出　　处：《光电技术应用》2021年第6期45-48,54,共5页Electro-Optic Technology Application

基　　金：国家自然科学基金青年项目(61804126);中国航空科学基金项目(20200043053005)。

摘　　要：科研人员通过不断研究和创新提出了多种光电忆阻结构来模拟生物体中的光突触,以用于神经形态计算领域。其中,有机光电忆阻器具有成本低、制备工艺简单、柔韧性高等特点,渐渐成为该领域的研究热点,吸引了越来越多研究者。传统PVK(聚乙烯基咔唑)有机光电忆阻器,其功能层材料PVK具有优异的光伏性能和较高的空穴迁移率,但是受限于有机物电阻转变机理不够明确、材料稳定性较差等原因存在稳定性差、可重复次数低等问题。文中在Al/PVK/W/Si结构的光电忆阻器基础上,引入具有高稳定性、高电子迁移率的氧化锌功能层,提高PVK光电忆阻器的相关性能。通过对制备得到的Al/PVK/ZnO/W/Si光电忆阻器进行详细测试,并与传统Al/PVK/W/Si结构的光电忆阻器进行对比,实验结果表明,新结构的光电忆阻器稳定性显著提高,可重复性增强。In recent years, researchers have proposed a variety of photoelectrical memristor structures to simulate light-synapse in living organisms through continuous research and innovation, which are used in the field of neuromorphic computing. Among them, organic photoelectric memristor devices have the characteristics of low cost,simple preparation process and high flexibility, and have gradually become a research hotspot in this field, attracting more and more researchers. The organic polymer PVK(polyvinylcarbazole), its functional layer material PVK organic photoelectric mersister, has excellent photovoltaic performance and high hole mobility, but it has poor stability and low repeatability due to the unclear mechanism of organic resistance transformation and poor material stability. Based on Al/PVK/W/Si photoelectric memristor, zinc oxide functional layer with high stability and high electron mobility is introduced to improve the related performance of PVK photoelectric memristor. The prepared Al/PVK/ZnO/W/Si photoelectric memristor is tested in detail, and is compared with the traditional Al/PVK/W/Si photoelectric memristor. The experimental results show that the stability of the new structure is significantly improved, and the repeatability is enhanced.

关 键 词：光电忆阻器 聚乙烯基咔唑 氧化锌 电阻转变 

分 类 号：TF125.8[冶金工程—粉末冶金]