DC-60 GHz硅基垂直互联结构仿真设计  

Design of DC-60 GHz silicon based vertical interconnection structure

作　　者：游月娟 刘德喜 刘亚威 史磊 You Yuejuan;Liu Dexi;Liu Yawei;Shi Lei(Beijing Institute of Telemetry Technology,Beijing 100094,China)

机构地区：[1]北京遥测技术研究所,北京100094

出　　处：《电子技术应用》2022年第1期142-145,151,共5页Application of Electronic Technique

摘　　要：设计了一种基于多层硅转接板堆叠的垂直互联结构,对DC-60 GHz频段内不考虑和考虑硅表面SiO2层的两种层间结构的垂直互联仿真结果进行对比,证明了硅表面SiO2层存在会对谐振频率及阻抗等射频性能产生影响;对后者垂直互联结构进行参数优化,射频传输性能较好,频率40 GHz以下时回波损耗S11小于-30 dB,60 GHz以下整体S11小于-15 dB,插入损耗S12在50 GHz以下大于-0.32 dB;研究了硅表面SiO2绝缘层厚度变化对射频信号传输性能的影响,结果表明适当增加其厚度有助于垂直互联结构性能优化。A vertical interconnection structure based on a stack of multi-layer silicon interposer boards is designed.The simulation results of the vertical interconnection structure of the two interlayer structure not considering and considering the SiO;layer on the silicon surface were compared in the DC-60 GHz frequency band.The existence of the SiO;layer has an impact on the radio frequency performance such as resonant frequency and impedance.The parameters of the latter vertical interconnection structure are optimized,its RF transmission performance is good,and the return loss S11 is less than-30 dB when the frequency is below 40 GHz,the overall S11 is less than-15 dB below 60 GHz,and the insertion loss S12 is greater than-0.32 dB below 50 GHz.This paper simulates and analyzes the influence of the thickness of SiO;insulation layer on the silicon surface on the transmission performance of the radio frequency signal.The results show that appropriately increasing thickness of SiO;insulation layer can help optimize the performance of the vertical interconnection structure.

关 键 词：三维集成 硅转接板堆叠 垂直互联结构 传输性能 

分 类 号：TN710[电子电信—电路与系统]