Recent development in electronic structure tuning of graphitic carbon nitride for highly efficient photocatalysis  

作　　者：Chao Li Jie Li Yanbin Huang Jun Liu Mengmeng Ma Kong Liu Chao Zhao Zhijie Wang Shengchun Qu Lei Zhang Haiyan Han Wenshuang Deng Zhanguo Wang 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,China [3]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [4]College of Mechanical and Electrical Engineering,Handan University,Handan 056005,China [5]School of Mathematical Science and Engineering,Hebei University of Engineering,Handan 056038,China

出　　处：《Journal of Semiconductors》2022年第2期24-34,共11页半导体学报（英文版）

基　　金：mostly supported by the National Natural Science Foundation of China(Nos.21975245,51972300,61674141,12004094,and 21976049);the Key Research Program of Frontier Science,CAS(QYZDB-SSW-SLH006);the National Key Research and Development Program of China(Nos.2017YFA0206600 and 2018YFE0204000);the Strategic Priority Research Program of Chinese Academy of Sciences(XDB43000000);the Natural Science Foundation of Hebei Province(F2019402063);the Youth Foundation of Hebei Province Department of Education(QN2019326);the Science and Technology Research and Development Program of Handan city(21422111246);the Key Project of Handan University(2018101);the support from the Youth Innovation Promotion Association,Chinese Academy of Sciences(2020114);the support from the Doctoral Special Fund Project of Hebei University of Engineering。

摘　　要：The utilization of solar energy to drive energy conversion and simultaneously realize pollutant degradation via pho-tocatalysis is one of most promising strategies to resolve the global energy and environment issues.During the past decade,graphite carbon nitride(g-C3N4)has attracted dramatically growing attention for solar energy conversion due to its excellent physicochemical properties as a photocatalyst.However,its practical application is still impeded by several limitations and short-comings,such as high recombination rate of charge carriers,low visible-light absorption,etc.As an effective solution,the elec-tronic structure tuning of g-C_(3)N_(4)has been widely adopted.In this context,firstly,the paper critically focuses on the different strategies of electronic structure tuning of g-C_(3)N_(4)like vacancy modification,doping,crystallinity modulation and synthesis of a new molecular structure.And the recent progress is reviewed.Finally,the challenges and future trends are summarized.

关 键 词：g-C_(3)N_(4) PHOTOCATALYST electronic structure 

分 类 号：O643.36[理学—物理化学] O644.1[理学—化学] X505[环境科学与工程—环境工程]