Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers  

作　　者：Tianyi Tang Tian Yu Guanqing Yang Jiaqian Sun Wenkang Zhan Bo Xu Chao Zhao Zhanguo Wang 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,China [3]College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Science,Beijing 101804,China

出　　处：《Journal of Semiconductors》2022年第1期37-43,共7页半导体学报（英文版）

基　　金：supported by the National Key Research and Development Program of China(Grant No.2018YFB2200104);the“Strategic Priority Research Program”of the Chinese Academy of Sciences(Grant No.XDB43010102);the Frontier Science Key Research Program of CAS(Grant No.QYZDB-SSW-SLH006)。

摘　　要：InAs/GaAs quantum dot(QD)lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method in the molecular beam epitaxy(MBE)system.In addition,strained superlattices were used to prevent threading disloca-tions from propagating to the active region of the laser.The as-grown material quality was characterized by the transmission electron microscope,scanning electron microscope,X-ray diffraction,atomic force microscope,and photoluminescence spectro-scopy.The results show that a high-quality GaAs buffer with few dislocations was obtained by the growth scheme we de-veloped.A broad-area edge-emitting laser was also fabricated.The O-band laser exhibited a threshold current density of 540 A/cm^(2) at room temperature under continuous wave conditions.This work demonstrates the potential of large-scale and low-cost manufacturing of the O-band InAs/GaAs quantum dot lasers on silicon substrates.

关 键 词：semiconductor laser molecular beam epitaxy quantum dots III-V on Si silicon photonics 

分 类 号：O413[理学—理论物理] TN248.4[理学—物理]