High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission  

作　　者：K.S.Zhuravlev A.L.Chizh K.B.Mikitchuk A.M.Gilinsky I.B.Chistokhin N.A.Valisheva D.V.Dmitriev A.I.Toropov M.S.Aksenov 

机构地区：[1]A.V.Rzhanov Institute of Semiconductor Physics,The Siberian Branch of the Russian Academy of Sciences,Ac.Lavrentiev Avenue 13,Novosibirsk 630090,Russia [2]Laboratory of Microwave Photonics,SSPA“Optics,Optoelectronics and Laser Technology”of National Academy of Sciences of Belarus,Logoiski trakt 22,Minsk 220090,Belarus

出　　处：《Journal of Semiconductors》2022年第1期44-48,共5页半导体学报（英文版）

基　　金：supported by the Russian Science Foundation(grant number 19-72-30023)。

摘　　要：The design,manufacturing and DC and microwave characterization of high-power Schottky barrier In Al As/In Ga As back-illuminated mesa structure photodiodes are presented.The photodiodes with 10 and 15μm mesa diameters operate at≥40 and 28 GHz,respectively,have the output RF power as high as 58 m W at a frequency of 20 GHz,the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness,and a photodiode dark current as low as 0.04 n A.We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in highspeed analog transmission lines with stringent requirements for phase noise.

关 键 词：InAlAs/InGaAs heterostructures microwave photodiodes microwave photonics 

分 类 号：TN386[电子电信—物理电子学]