Band gap tuning and p to n-type transition in Mn-doped CuO nanostructured thin films  

作　　者：R.Rahaman M.Sharmin J.Podder 

机构地区：[1]Department of Physics,Bangladesh University of Engineering and Technology,Dhaka 1000,Bangladesh

出　　处：《Journal of Semiconductors》2022年第1期59-68,共10页半导体学报（英文版）

基　　金：the Bangladesh University of Engineering and Technology,Dhaka,Bangladesh,for financial support and the spray pyrolysis lab of the Department of Physics to perform this work。

摘　　要：Here we discuss the synthesis of copper(II)oxide(CuO)and manganese(Mn)-doped CuO thin films varying with 0 to 8 at%Mn using the spray pyrolysis technique.As-deposited film surfaces comprised of agglomerated spherical nanoparticles and a semi-spongy porous structure for 4 at%Mn doping.Energy dispersive analysis of X-rays confirmed the chemical composi-tion of the films.X-ray diffraction spectra showed a polycrystalline monoclinic structure with the predominance of the(11)peak.Optical band gap energy for direct and indirect transitions was estimated in the ranges from 2.67-2.90 eV and 0.11-1.73 eV,respectively.Refractive index and static dielectric constants were computed from the optical spectra.Electrical resistivity of CuO and Mn-doped CuO(Mn:CuO)thin films was found in the range from 10.5 to 28.6Ω·cm.The tiniest electron effective mass was calculated for 4 at%Mn:CuO thin films.P to n-type transition was observed for 4 at%Mn doping in CuO films.Carrier con-centration and mobility were found in the orders of 10^(17)cm^(-3)and 10^(-1)cm^(2)/(V·s),respectively.The Hall coefficient was found to be between 9.9 and 29.8 cm^(3)/C.The above results suggest the suitability of Mn:CuO thin films in optoelectronic applications.

关 键 词：Mn:CuO spray pyrolysis FESEM XRD band gap Hall effect 

分 类 号：TB383.2[一般工业技术—材料科学与工程]