GaAs基HEMT力敏结构伽马辐照损伤研究  

Research on Gamma Irradiation Damage of GaAs HMET Force-sensitive Structure

作　　者：王瑞荣[1,2] 郭浩[2] 唐军[2] 刘金萍[2] 刘丽双 WANG Ruirong;GUO Ha;TANG Jun;LIU Jinpin;LIU Lishuang(Department of Electronic Engineering.Taiyuan Institute of Technology.Taiyuan.030008,CHN;Key Laboratory of Instrumentation Science&Dynamic Measurement of Ministry of Education,North University of China,Taiyuan,030051,CHN)

机构地区：[1]太原工业学院电子工程系,太原030008 [2]中北大学仪器科学与动态测试教育部重点实验室,太原030051

出　　处：《固体电子学研究与进展》2021年第6期449-453,共5页Research & Progress of SSE

基　　金：国家自然科学基金面上项目(51775522);山西省量子传感与精密测量重点实验室(201905D121001);山西省“1331工程”重点学科建设;山西省高等学校科技创新项目(2020L0638)。

摘　　要：利用^(60)Co-γ射线对设计的GaAs基HEMT力敏结构进行了不同剂量的辐照,通过对辐照前后结构的电学特性、力敏特性分析对比,得到了γ辐照对力敏结构的损伤影响。与未辐照样品相比,90 MRad剂量辐照后HEMT力敏结构的漏极电流降低了约74%,辐照剂量高于100 MRad时,样品被击穿,失去工作特性。力敏特性测试结果表明,随着辐照剂量的不断增加,结构的灵敏度发生降低,90 MRad剂量辐照后结构的灵敏度降低了76%。The GaAs based HEMT force-sensitive structure was designed and irradiated with ^(60)Co γ-ray under different doses in this paper. The damage effect of γ-ray on the force-sensitive structure was obtained from analyzed the output characteristics,force-sensitivity characteristic of HEMT structure before and after irradiated. The drain current of HEMT reduced by 74% after irradiated with90 MRad compared with the pristine one. The HEMT structure is broken down and lost working characteristic when the dose is higher than 100 MRad. The results of force-sensitive characteristics show that the sensitivity of the structure decreases with the increase of irradiation dose,which reduces by76% after 90 MRad irradiation.

关 键 词：高电子迁移率晶体管 力敏结构 伽马辐照 损伤特性 

分 类 号：TN386[电子电信—物理电子学]