Approaching strain limit of two-dimensional MoS_(2) via chalcogenide substitution  

基于原子取代的应变工程实现二维MoS_(2)材料的极限应变

作　　者：Kailang Liu Xiang Chen Penglai Gong Ruohan Yu Jinsong Wu Liang Li Wei Han Sanjun Yang Chendong Zhang Jinghao Deng Aoju Li Qingfu Zhang Fuwei Zhuge Tianyou Zhai 刘开朗;陈翔;巩朋来;余若瀚;吴劲松;李亮;韩伟;杨三军;张晨栋;邓京昊;李奥炬;张庆福;诸葛福伟;翟天佑(State Key Laboratory of Materials Processing and Die&Mould Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China;Nano and Heterogeneous Materials Center,School of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China;Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China;State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Nanostructure Research Center,Wuhan University of Technology,Wuhan 430070,China;Institutes of Physical Science and Information Technology,Anhui University,Hefei 231699,China;School of Physics and Technology,Wuhan University,Wuhan 430072,China)

机构地区：[1]State Key Laboratory of Materials Processing and Die&Mould Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China [2]Nano and Heterogeneous Materials Center,School of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China [3]Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China [4]State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Nanostructure Research Center,Wuhan University of Technology,Wuhan 430070,China [5]Institutes of Physical Science and Information Technology,Anhui University,Hefei 231699,China [6]School of Physics and Technology,Wuhan University,Wuhan 430072,China

出　　处：《Science Bulletin》2022年第1期45-53,M0004,共10页科学通报（英文版）

基　　金：supported by the National Natural Science Foundation of China(21825103,52001165);Natural Science Foundation of Hubei Province(2019CFA002);Natural Science Foundation of Jiangsu Province(BK20200475);the Fundamental Research Funds for the Central Universities(2019kfy XMBZ018,30921011215);supports from Analytical and Testing Center in Huazhong University of Science and Technology as well as Nanostructure Research Center(NRC)supported by the Fundamental Research Funds for the Central Universities(WUT:2019III012GX,2020III002GX)。

摘　　要：Strain engineering is a promising method for tuning the electronic properties of two-dimensional(2 D)materials,which are capable of sustaining enormous strain thanks to their atomic thinness.However,applying a large and homogeneous strain on these 2D materials,including the typical semiconductor MoS_(2),remains cumbersome.Here we report a facile strategy for the fabrication of highly strained MoS_(2) via chalcogenide substitution reaction(CSR)of MoTe_(2) with lattice inheritance.The MoS_(2)resulting from the sulfurized MoTe_(2) sustains ultra large in-plane strain(approaching its strength limit~10%)with great homogeneity.Furthermore,the strain can be deterministically and continuously tuned to~1.5%by simply varying the processing temperature.Thanks to the fine control of our CSR process,we demonstrate a heterostructure of strained MoS_(2)/MoTe_(2)with abrupt interface.Finally,we verify that such a large strain potentially allows the modulation of MoS_(2) bandgap over an ultra-broad range(~1 e V).Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices.应变工程被广泛用于调控材料的物理化学性质.二维材料能承载极高的应变,因而有望通过应变工程实现其性质的有效调控.然而,如何在二维材料中引入应变仍是目前亟待解决的关键问题.本文用一种在二维材料内进行原子取代的方法来产生均匀有效的应变.通过对MoTe_(2)进行可控硫化,可在保留晶格结构的同时实现S原子对Te原子的取代反应,最终制备应变量高达10%的MoS_(2),接近其应变极限.通过改变硫化温度即可实现应变的连续宽幅的调节,进而实现其带隙的调控.该策略为应变工程在二维材料中的应用铺平了道路,有望被用于制备基于应变二维材料的高性能器件.

关 键 词：Strain engineering 2D materials Chalcogenide substitution Controllable strain Lattice inheritance 

分 类 号：O469[理学—凝聚态物理]