忆阻基本性质模拟仿真研究  

Simulation Research on Basic Properties of Memristor

作　　者：许黎[1] 何都益[2] 蒋强[1] 黄果[3] XU Li;HE Duyi;JIANG Qiang;HUANG Guo(College of Electronics and Materials Engineering,Leshan Normal University,Leshan Sichuan 614000,China;Library&Archives,Leshan Normal University,Leshan Sichuan 614000,China;School of Artificial Intelligence,Leshan Normal University,Leshan Sichuan 614000,China)

机构地区：[1]乐山师范学院电子与材料工程学院,四川乐山614000 [2]乐山师范学院图书馆、档案馆,四川乐山614000 [3]乐山师范学院人工智能学院,四川乐山614000

出　　处：《乐山师范学院学报》2021年第12期11-17,共7页Journal of Leshan Normal University

基　　金：四川省教育厅项目“分数阶忆阻电路研究”(INLP201904)。

摘　　要：文章参考了大量国外资料,对忆阻的定义、分类及重要性质进行归纳综述,并对忆阻的重要性质进行仿真模拟。学者在对忆阻的研究过程中提出了诸多的忆阻模型,文章将诸多的忆阻模型归纳为三种数学模型,并对每种模型进行了研究,再利用MATLAB对每种忆阻模型进行性质模拟,力求将忆阻的相关理论知识系统化、完整化。This paper summarizes the definition,classification and important properties of memristor by referring to a large number of foreign data,and simulates the fingerprint characteristics of memristor.Scholars have put forward many memristor models in the process of memristor research.In this paper,many memristor models are summarized into three mathematical models,and each model is deeply studied,and then the properties of each memristor model are simulated by MATLAB.Try to systematize and complete the relevant theoretical knowledge of memristor.

关 键 词：忆阻 分类 性质特征 数学理论模型 

分 类 号：TM54[电气工程—电器]