Fluorine-defects induced solid-state red emission of carbon dots with an excellent thermosensitivity  

作　　者：Haizhen Ding Jiahui Xu Lei Jiang Chen Dong Qi Meng Sajid ur Rehman Junfeng Wang Zhishen Ge Vladimir Yu.Osipov Hong Bi 

机构地区：[1]School of Chemistry and Chemical Engineering,Anhui Key Laboratory of Modern Biomanufacturing,Anhui University,Hefei 230601,China [2]High Magnetic Field Laboratory,Hefei Institutes of Physical Science,Chinese Academy of Sciences,Hefei 230031,China [3]CAS Key Laboratory of Soft Matter Chemistry,Department of Polymer Science and Engineering,University of Science and Technology of China,Hefei 230601,China [4]Ioffe Institute,Russian Academy of Sciences,St.Petersburg 194021,Russian Federation

出　　处：《Chinese Chemical Letters》2021年第11期3646-3651,共6页中国化学快报（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(No.51772001);Anhui Province Key Research and Development Plan Project International Science and Technology Cooperation Special Project(No.202004bll020015);support of the Key Laboratory of Structure and Functional Regulation of Hybrid Materials(Anhui University),Ministry of Education.

摘　　要：Up to date,solid-state carbon dots(CDs)with bright red fluorescence have scarcely achieved due to aggregation-caused quenching(ACQ)effect and extremely low quantum yield in deep-red to near infrared region.Here,we report a novel fluorine-defects induced solid-state red fluorescence(λ_(em)=676 nm,the absolute fluorescence quantum yields is 4.17%)in fluorine,nitrogen and sulfur co-doped CDs(F,N,S-CDs),which is the first report of such a long wavelength emission of solid-state CDs.As a control,CDs without fluorine-doping(N,S-CDs)show no fluorescence in solid-state,and the fluorescence quantum yield/emission wavelength of N,S-CDs in solution-state are also lower/shorter than that of F,N,S-CDs,which is mainly due to the F-induced defect traps on the surface/edge of F,N,S-CDs.Moreover,the solid-state F,N,S-CDs exhibit an interesting temperature-sensitive behavior in the range of 80-420 K,with the maximum fluorescence intensity at 120 K,unveiling its potential as the temperature-dependent fluorescent sensor and the solid-state light-emitting device adapted to multiple temperatures.

关 键 词：Carbon dots Fluorine defects Solid-state fluorescence THERMOSENSITIVITY Red emission 

分 类 号：TB383.1[一般工业技术—材料科学与工程] O657.3[理学—分析化学]