Random-Gate-Voltage Induced Al'tshuler–Aronov–Spivak Effect in Topological Edge States  

在线阅读下载全文

作  者:Kun Luo Wei Chen Li Sheng D.Y.Xing 罗坤;陈伟;盛利;邢定钰(National Laboratory of Solid State Microstructures and School of Physics,Nanjing University,Nanjing 210093,China;Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China)

机构地区:[1]National Laboratory of Solid State Microstructures and School of Physics,Nanjing University,Nanjing 210093,China [2]Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China

出  处:《Chinese Physics Letters》2021年第11期7-12,共6页中国物理快报(英文版)

基  金:Supported by the National Natural Science Foundation of China (Grant Nos. 12074172, 11674160, and 11974168);the Startup Grant at Nanjing University;the State Key Program for Basic Researches of China (Grant No. 2017YFA0303203);the Excellent Programme at Nanjing University。

摘  要:Helical edge states are the hallmark of the quantum spin Hall insulator. Recently, several experiments have observed transport signatures contributed by trivial edge states, making it difficult to distinguish between the topologically trivial and nontrivial phases. Here, we show that helical edge states can be identified by the randomgate-voltage induced Φ_(0)/2-period oscillation of the averaged electron return probability in the interferometer constructed by the edge states. The random gate voltage can highlight the Φ_(0)/2-period Al'tshuler–Aronov–Spivak oscillation proportional to sin^(2)(2πΦ/Φ_(0)) by quenching the Φ_(0)-period Aharonov–Bohm oscillation. It is found that the helical spin texture induced π Berry phase is key to such weak antilocalization behavior with zero return probability at Φ = 0. In contrast, the oscillation for the trivial edge states may exhibit either weak localization or antilocalization depending on the strength of the spin-orbit coupling, which has finite return probability at Φ = 0. Our results provide an effective way for the identification of the helical edge states. The predicted signature is stabilized by the time-reversal symmetry so that it is robust against disorder and does not require any fine adjustment of system.

关 键 词:AAS Spivak Effect in Topological Edge States Aronov Random-Gate-Voltage Induced Al'tshuler 

分 类 号:O469[理学—凝聚态物理]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象