Interface phonon polariton coupling to enhance grapheneabsorption  

作　　者：Zhenyao CHEN Junjie MEI Ye ZHANG Jishu TAN Qing XIONG Changhong CHEN 

机构地区：[1]Wuhan National Laboratory for Optoelectronics,Huazhong University of Science and Technology,Wuhan 430074,China

出　　处：《Frontiers of Optoelectronics》2021年第4期445-449,共5页光电子前沿（英文版）

基　　金：the National NaturalScience Foundation of China (NSFC) (Grant No. 61675080);FundamentalResearch Funds for the Central Universities (HUST: 2016YXMS021).

摘　　要：Here we present a graphene photodetector ofwhich the graphene and structural system infraredabsorptions are enhanced by interface phonon polariton(IPhP) coupling. IPhPs are supported at the SiC/AlNinterface of device structure and used to excite interbandtransitions of the intrinsic graphene under gated-fieldtuning. The simulation results show that at normalincidence the absorbance of graphene or system reachesup to 43% or closes to unity in a mid-infrared frequencyrange. In addition, we found the peak-absorption frequencyis mainly decided by the AlN thickness, and it has ared-shift as the thickness decreases. This structure has greatapplication potential in graphene infrared detectiontechnology.

关 键 词：interface phonon polariton(IPhP) infrared absorption enhancement graphene photodetector 

分 类 号：TN215[电子电信—物理电子学]