Phase-pure two-dimensional Fe_(X)GeTe_(2) magnets with near-room-temperature Tc  

作　　者：Govindan Kutty Rajendran Nair Zhaowei Zhang Fuchen Hou§ Ali Abdelaziem Xiaodong Xu Steve Wu Qing Yang Nan Zhang Weiqi Li Chao Zhu Yao Wu Heng Weiling Lixing Kang Teddy Salim Jiadong Zhou Lin Ke Junhao Lin Xingji Li Weibo Gao Zheng Liu 

机构地区：[1]School of Material Science and Engineering,50 Nanyang Ave,639798,Singapore [2]Division of Physics and Applied Physics,School of Physical and Mathematical Sciences,Nanyang Technological University,21 Nanyang Link,637371 Singapore [3]Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China [4]Institute of Materials Research and Engineering,Agency for Science Technology and Research(A*STAR),2 Fusionopolis Way,Singapore 138634,Singapore [5]School of Material Science and Engineering,School of Physics,Harbin Institute of Technology,Harbin 150001,China [6]Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices,Southern University of Science and Technology,Shenzhen 518055,China [7]National Institute of Laser Enhanced Sciences(NILES),Cairo University,Giza 12613,Egypt [8]CINTRA CNRS/NTU/THALES,UMI3288,Research Techno Plaza,637553,Singapore [9]School of Electrical and Electronic Engineering,Nanyang Technological University,50 Nanyang Ave,639798,Singapore

出　　处：《Nano Research》2022年第1期457-464,共8页纳米研究（英文版）

基　　金：supported from National Research Foundation Singapore programme NRF-CRP22-2019-0007,NRF-CRP22-2019-0004 and NRF-CRP21-2018-0007;supported by the Ministry of Education,Singapore,under its AcRF Tier 3 Programme‘Geometrical Quantum Materials’(MOE2018-T3-1-002),AcRF Tier 2(MOE2019-T2-2-105)and AcRF Tier 1 RG4/17 and RG7/18;We also thank the funding support from National Research foundation(NRF-CRP22-2019-0004).

摘　　要：Two-dimensional(2D)ferromagnets with out-of-plane(OOP)magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage density.However,a scalable approach to synthesize 2D magnets with OOP anisotropy directly on the complimentary metal-oxide semiconductor(CMOS)compatible substrates has not yet been mainly explored,which hinders the practical application of 2D magnets.This work demonstrates a cascaded space confined chemical vapor deposition(CS-CVD)technique to synthesize 2D FexGeTe_(2) ferromagnets.The weight fraction of iron(Fe)in the precursor controls the phase purity of the as-grown FexGeTe2.As a result,high-quality Fe_(3)GeTe_(2) and Fe_(5)GeTe_(2) flakes have been grown selectively using the CS-CVD technique.Curie temperature(Tc)of the as-grown FexGeTe2 can be up to-280 K,nearly room temperature.The thickness and temperature-dependent magnetic studies on the Fe_(5)GeTe_(2) reveal a 2D Ising to 3D XY behavior.Also,Terahertz spectroscopy experiments on Fe_(5)GeTe_(2) display the highest conductivity among other FexGeTe_(2) 2D magnets.The results of this work indicate a scalable pathway for the direct growth and integration of 2D ternary magnets on CMOS-based substrates to develop spintronic memory devices.

关 键 词：cascaded space confined chemical vapor deposition(CVD) van der Waals(vdW) FERROMAGNETISM out of plane anisotropy iron germanium telluride terahertz 

分 类 号：TP34[自动化与计算机技术—计算机系统结构]