InAs/GaSbⅡ类超晶格材料界面特性的表征分析  

Characterization and Analysis of Interface Characteristics of InAs/GaSb Type-ⅡSuperlattice Materials

作　　者：任洋 覃钢[1] 李俊斌 杨晋 李艳辉[1] 杨春章[1] 孔金丞[1] REN Yang;QIN Gang;LI Junbin;YANG Jin;LI Yanhui;YANG Chunzhang;KONG Jincheng(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2022年第2期115-122,共8页Infrared Technology

摘　　要：本文系统地介绍了国内外研究机构对超晶格界面进行研究时采用的测试分析手段。其中,通过拉曼光谱、高分辨率透射电子显微镜(HRTEM)、扫描隧道显微镜(STM)、二次离子质谱(SIMS)、X射线光电子能谱(XPS)等测试方法可以对InAs/GaSbⅡ类超晶格材料界面类型、界面粗糙度、陡峭性等特性进行测试分析,从而评估超晶格界面质量。光致发光谱(PL谱)、高分辨率X射线衍射(HRXRD)、霍尔测试、吸收光谱等测试方法则可以研究超晶格界面质量对超晶格材料能带、晶体质量、光学性质的影响。This article systematically introduces the testing and analysis methods used by domestic and foreign research institutions to study the superlattice interface.To evaluate the quality of the superlattice interface,the InAs/GaSb type-Ⅱsuperlattice interface type,interface roughness,abruptness,and other characteristics can be tested and analyzed using Raman spectroscopy,high-resolution transmission electron microscopy,a scanning tunneling microscope,secondary ion mass spectroscopy,and X-ray photoelectron spectroscopy.Photoluminescence spectroscopy,high-resolution X-ray diffraction,Hall measurements,and absorption spectroscopy can be used to study the effect of the superlattice interface quality on the energy band,crystal quality,and optical properties of superlattice materials.

关 键 词：InAs/GaSbⅡ类超晶格 InSb-like界面 GaAs-like界面 陡峭性 

分 类 号：TN215[电子电信—物理电子学] TN304