Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement  

作　　者：Runrun Hao Kun Zhang Yinggang Li Qiang Cao Xueying Zhang Dapeng Zhu Weisheng Zhao 郝润润;张昆;李迎港;曹强;张学莹;朱大鹏;赵巍胜(Fert Beijing Institute,MIIT Key Laboratory of Spintronics,School of Integrated Circuit Science and Engineering,Beihang University,Beijing 100191,China;Beihang-Goertek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University,Qingdao 266000,China;Spintronics Institute,University of Jinan,Jinan 250022,China;Truth Instruments Co.Ltd.,Qingdao 266000,Chin)

机构地区：[1]Fert Beijing Institute,MIIT Key Laboratory of Spintronics,School of Integrated Circuit Science and Engineering,Beihang University,Beijing 100191,China [2]Beihang-Goertek Joint Microelectronics Institute,Qingdao Research Institute,Beihang University,Qingdao 266000,China [3]Spintronics Institute,University of Jinan,Jinan 250022,China [4]Truth Instruments Co.Ltd.,Qingdao 266000,China

出　　处：《Chinese Physics B》2022年第1期101-106,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 11904017, 11974145, 51901008, and 12004024);Shandong Provincial Natural Science Foundation, China (Grant No. ZR2020ZD28);platform from Qingdao Science and Technology Commission;the Fundamental Research Funds for the Central Universities of China

摘　　要：Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque(SOT)effect.However,the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process,or the non-electric approach of Kerr imaging technique.Here,we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field.In this case,the symmetry of MR is broken,resulting in a resistance difference for opposite magnetization orientations.Moreover,the feasibility of our method is widely evidenced in heavy metal/ferromagnet(Pt/Ni_(20)Fe_(80) and W/Co_(20)Fe_(60)B_(20))and the topological insulator/ferromagnet(Bi_(2)Se_(3)/Ni_(20)Fe_(80)).Our work simplifies the characterization process of the in-plane magnetization switching,which can promote the development of SOT-based devices.

关 键 词：MAGNETORESISTANCE in-plane magnetization switching electrical detection 

分 类 号：TM936.6[电气工程—电力电子与电力传动]