Separating spins by dwell time of electrons across parallel double δ-magnetic-barrier nanostructure applied by bias  

作　　者：Sai-Yan Chen Mao-Wang Lu Xue-Li Cao 陈赛艳;卢卯旺;曹雪丽(College of Science,Guilin University of Technology,Guilin 541004,China)

机构地区：[1]College of Science,Guilin University of Technology,Guilin 541004,China

出　　处：《Chinese Physics B》2022年第1期524-528,共5页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant No.11864009).

摘　　要：The dwell time and spin polarization(SP)of electrons tunneling through a parallel doubleδ-magnetic-barrier nanostructure in the presence of a bias voltage is studied theoretically in this work.This nanostructure can be constructed by patterning two asymmetric ferromagnetic stripes on the top and bottom of InAs/AlxIn1-xAs heterostructure,respectively.An evident SP effect remains after a bias voltage is applied to the nanostructure.Moreover,both magnitude and sign of spin-polarized dwell time can be manipulated by properly changing the bias voltage,which may result in an electrically-tunable temporal spin splitter for spintronics device applications.

关 键 词：parallel doubleδ-magnetic-barrier nanostructure BIAS dwell time spin polarization temporal spin splitter 

分 类 号：O469[理学—凝聚态物理]