Spin transport properties for B-doped zigzag silicene nanoribbons with different edge hydrogenations  

作　　者：Jing-Fen Zhao Hui Wang Zai-Fa Yang Hui Gao Hong-Xia Bu Xiao-Juan Yuan 赵敬芬;王辉;杨在发;高慧;歩红霞;袁晓娟(School of Physics and Electronic Engineering,Qilu Normal University,Jinan 250100,China)

机构地区：[1]School of Physics and Electronic Engineering,Qilu Normal University,Jinan 250100,China

出　　处：《Chinese Physics B》2022年第1期535-539,共5页中国物理B（英文版）

基　　金：the National Natural Science Foundations of China(Grant No.11574118);the Natural Science Foundation of Shandong Province,China(Grant No.ZR2019PEM006).

摘　　要：Exploring silicon-based spin modulating junction is one of the most promising areas of spintronics.Using nonequilibrium Green's function combined with density functional theory,a set of spin filters of hydrogenated zigzag silicene nanoribbons is designed by substituting a silicon atom with a boron one and the spin-correlated transport properties are studied.The results show that the spin polarization can be realized by structural symmetry breaking induced by boron doping.Remarkably,by tuning the edge hydrogenation,it is found that the spin filter efficiency can be varied from 30%to 58%.Moreover,it is also found and explained that the asymmetric hydrogenation can give rise to an obvious negative differential resistance which usually appears at weakly coupled junction.These findings indicate that the boron-doped ZSiNR is a promising material for spintronic applications.

关 键 词：silicene nanoribbons spin filtering effect negative differential resistance 

分 类 号：TN386[电子电信—物理电子学]