Removal of GaN film over AlGaN with inductively coupled BCl_(3)/Ar atomic layer etch  

作　　者：Jia-Le Tang Chao Liu 唐家乐;刘超(School of Physics and Electronic Engineering,Jiangsu Normal University(JSNU),Xuzhou 221116,China)

机构地区：[1]School of Physics and Electronic Engineering,Jiangsu Normal University(JSNU),Xuzhou 221116,China

出　　处：《Chinese Physics B》2022年第1期613-617,共5页中国物理B（英文版）

基　　金：the National Foreign Experts Bureau High-end Foreign Experts Project,China(Grant No.G20190114003);the Key Research and Development Program of Jiangsu Province,China(Grant No.BE2018063);the Natural Science Research Projects of Colleges and Universities in Jiangsu Province,China(Grant No.19KJD140002);the Scientific Research Program for Doctoral Teachers of JSNU,China(Grant No.9212218113).

摘　　要：Atomic layer etching(ALE)of thin film GaN(0001)is reported in detail using sequential surface modification by BCl_(3) adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a reactive ion etching system.The estimated etching rate of GaN is~0.74 nm/cycle.The GaN is removed from the surface of AlGaN after 135 cycles.To study the mechanism of the etching,the detailed characterization and analyses are carried out,including scanning electron microscope(SEM),x-ray photoelectron spectroscopy(XPS),and atomic force microscope(AFM).It is found that in the presence of GaCl_(x) after surface modification by BCl_(3),the GaCl_(x) disappears after having exposed to low energy Ar plasma,which effectively exhibits the mechanism of atomic layer etch.This technique enables a uniform and reproducible fabrication process for enhancement-mode high electron mobility transistors with a p-GaN gate.

关 键 词：atomic layer etch GaN high electron mobility transistor 

分 类 号：TN386[电子电信—物理电子学]