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作 者:Xiang Xu Gangquan Si Zhang Guo Babajide Oluwatosin Oresanya 徐翔;司刚全;郭璋;Babajide Oluwatosin Oresanya(State Key Laboratory of Electrical Insulation and Power Equipment,Shaanxi Key Laboratory of Smart Grid,School of Electrical Engineering,Xi'an Jiaotong University,Xi'an 710049,China)
出 处:《Chinese Physics B》2022年第1期642-651,共10页中国物理B(英文版)
基 金:the National Natural Science Foundation of China(Grant No.52077160).
摘 要:Recently,the memory elements-based circuits have been addressed frequently in the nonlinear circuit theory due to their unique behaviors.Thus,the modeling and characterizing of the mem-elements become essential.In this paper,the analysis of the multiple fractional-order voltage-controlled memcapacitors model in parallel connection is studied.Firstly,two fractional-order memcapacitors are connected in parallel,the equivalent model is derived,and the characteristic of the equivalent memcapacitor is analyzed in positive or negative connection.Then a new understanding manner according to different rate factor K and fractional orderαis derived to explain the equivalent modeling structure conveniently.Additionally,the negative order appears,which is a consequence of the combination of memcapacitors in different directions.Meanwhile,the equivalent parallel memcapacitance has been drawn to determine that multiple fractional-order memcapacitors could be calculated as one composite memcapacitor.Thus,an arbitrary fractional-order equivalent memcapacitor could be constructed by multiple fractional-order memcapacitors.
关 键 词:memcapacitor fractional calculus parallel connection equivalent model
分 类 号:TM53[电气工程—电器] TN60[电子电信—电路与系统] TP333[自动化与计算机技术—计算机系统结构]
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