Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology  

作　　者：Yan-Fu Wang Bo Wang Rui-Ze Feng Zhi-Hang Tong Tong Liu Peng Ding Yong-Bo Su Jing-Tao Zhou Feng Yang Wu-Chang Ding Zhi Jin 王彦富;王博;封瑞泽;童志航;刘桐;丁芃;苏永波;周静涛;杨枫;丁武昌;金智(University of Chinese Academic of Sciences,Beijing 100029,China;High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China)

机构地区：[1]University of Chinese Academic of Sciences,Beijing 100029,China [2]High-Frequency High-Voltage Device and Integrated Circuits Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [3]Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China

出　　处：《Chinese Physics B》2022年第1期658-663,共6页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant No.61434006).

摘　　要：Heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The channel of the new device is In_(0.7)Ga_(0.3)As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained.The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz.In addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.

关 键 词：heterogeneous integration InP high electron mobility transistor QUARTZ small-signal model 

分 类 号：TN386[电子电信—物理电子学]