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作 者:Tao Wang Gui-Jiang Xiao Ren Sun Lin-Bao Luo Mao-Xiang Yi 汪涛;肖贵将;孙韧;罗林保;易茂祥(School of Microelectronics,Hefei University of Technology,Hefei 230601,China;School of Electronic Science and Engineering,Southeast University,Nanjing 210096,China;School of Information Science and Technology,University of Science and Technology of China,Hefei 230027,China;National Engineering Laboratory of Special Display Technology,Hefei 230009,China)
机构地区:[1]School of Microelectronics,Hefei University of Technology,Hefei 230601,China [2]School of Electronic Science and Engineering,Southeast University,Nanjing 210096,China [3]School of Information Science and Technology,University of Science and Technology of China,Hefei 230027,China [4]National Engineering Laboratory of Special Display Technology,Hefei 230009,China
出 处:《Chinese Physics B》2022年第1期692-703,共12页中国物理B(英文版)
基 金:the Fundamental Research Funds for the Central Universities of China(Grant No.JD2020JGPY0010);the China Post-Doctoral Science Foundation(Grant No.2020M671834).
摘 要:To enhance device performance and reduce fabrication cost,a series of electron transporting material(ETM)-free perovskite solar cells(PSCs)is developed by TCAD Atlas.The accuracy of the physical mode of PSCs is verified,due to the simulations of PEDOT:PSS-CH_(3)NH_(3)PbI_(3)-PCBM and CuSCN-CH_(3)NH_(3)PbI_(3)-PCBM p-i-n PSCs showing a good agreement with experimental results.Different hole transporting materials(HTMs)are selected and directly combined with n-CH_(3)NH_(3)PbI_(3),and the CuSCN-CH_(3)NH_(3)PbI_(3) is the best in these ETM-free PSCs.To further study the CuSCN-CH_(3)NH_(3)PbI_(3) PSC,the influences of back electrode material,gradient band gap,thickness,doping concentration,and bulk defect density on the performance are investigated.Energy band and distribution of electric field are utilized to optimize the design.As a result,the efficiency of CuSCN-CH_(3)NH_(3)PbI_(3) PSC is achieved to be 26.64%.This study provides the guideline for designing and improving the performances of ETM-free PSCs.
关 键 词:electron transporting material(ETM)-free perovskite solar cell inorganic hole transporting material(HTM) back electrode gradient band gap
分 类 号:TM914.4[电气工程—电力电子与电力传动]
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