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作 者:刘文进[1] 王皓 南敬昌[1] LIU Wenjin;WANG Hao;NAN Jingchang(School of electronics and information engineering,Liaoning Technical University,Huludao 125105,China)
机构地区:[1]辽宁工程技术大学电子与信息工程学院,葫芦岛125105
出 处:《电波科学学报》2022年第1期168-174,共7页Chinese Journal of Radio Science
基 金:国家自然科学基金(61971210);国家自然科学基金青年基金(61701211);辽宁省特聘教授项目(551710007004)。
摘 要:为满足5G通信中多标准、多模式系统对功率放大器的需求,提出了一种新型的可重构双波段匹配电路结构.首先,在输出匹配网络中加入分布式PIN开关,通过开关的闭合与断开实现两个双波段输出匹配电路的良好匹配;然后,基于带通滤波器理论设计的宽带输入匹配网络,能够实现1.5~2.5 GHz频段内的良好匹配.为验证方法的有效性,采用CGH40010F GaN晶体管,设计并加工了一款工作在1.6 GHz&2.1 GHz、1.8 GHz&2.3 GHz的可重构双波段功率放大器.实测结果显示:在四个频段可重构双波段功放的功率附加效率(power added efficiency,PAE)均大于46.2%,饱和输出功率大于39.09 dBm.该功放具有电路复杂度和设计难度较低的特点,且每个波段都具有较高的输出功率和PAE,为设计可重构功放提供了一种可行的方案.In order to meet the demand for power amplifiers in multi-standard and multi-mode systems in 5 G communications, a new reconfigurable dual-band matching circuit structure is proposed. First, a distributed PIN switch is added to the output matching network. Disconnect the two dual-band output matching circuits to achieve good matching;then, the broadband input matching network designed based on the theory of band-pass filters can achieve good matching in the 1.5 GHz-2.5 GHz frequency band. To verify the effectiveness of the method, we used CGH40010 F GaN transistor, designed and processed a reconfigurable dual-band power amplifier working at 1.6 GHz &2.1 GHz, 1.8 GHz & 2.3 GHz. The actual measurement results show that the power added efficiency of the reconfigurable dual-band power amplifier(power added efficiency, PAE) are greater than 46.2%, and the saturated output power is greater than 39.09 dBm. The power amplifier has the characteristics of circuit complexity and low design difficulty, and each band has high output power and power added efficiency, which provides a feasible solution for design reconfigurable power amplifiers.
关 键 词:功率放大器 可重构 PIN二极管 功率附加效率(PAE) 双波段
分 类 号:TN722[电子电信—电路与系统]
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