碲镉汞红外探测器电极接触研究  

Study of the electrode contact in HgCdTe infrared detector

作　　者：何斌 刘明[1] 宁提[1] 陈书真 祁娇娇 HE Bin;LIU Ming;NING Ti;CHEN Shu-zhen;QI Jiao-jiao(North China Research Institution of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2022年第1期71-75,共5页Laser & Infrared

摘　　要：金属/碲镉汞电极接触是红外焦平面探测器的重要组成部分,对器件的性能与稳定性影响较大。然而在碲镉汞金属化过程中,金属离子能量较高将有可能对碲镉汞表面造成损伤。本文采用了离子束沉积系统生长金属电极,探究了束流、束压以及热处理等条件对碲镉汞红外探测器接触性能的影响。研究表明,碲镉汞在生长电极后表面会受到一定程度的损伤;随着离子能量的升高,对材料表面损伤加剧。在I-V曲线中,电极沉积损伤较大的器件表现出软击穿现象;在热处理后,在一定程度上可以修复电极沉积时能量过大造成的损伤,提高了电极接触性能。The contact of HgCdTe electrode is an important part of the infrared focal plane detector,which determines the performance and stability of the device.However,high energy ions may cause damage to the surface of HgCdTe in the deposition process.In this paper,an ion beam deposition system is used to deposit metal electrodes,and the effects of beam current;beam voltage and annealing on the HgCdTe infrared detector were investigated.The results show that the surface of HgCdTe would be damaged when the electrode is grown,and the damage to the material surface will be aggravated with the increase of ion energy.In the I-V curve,the devices with large electrode deposition damage show breakdown phenomenon,after heat treatment,the damage caused by excessive energy deposition can be repaired.

关 键 词：碲镉汞 离子束沉积 电极接触 热处理 

分 类 号：TN213[电子电信—物理电子学]